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GADEST 2026

27 September 2026 to 2 October 2026
GADEST 2026 - San Servolo Island, Venice (Italy)
Europe/Rome timezone

Contribution List

133 out of 133 displayed
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  1. 137. Welcome Speech
    27/09/2026, 15:45
    Oral presentation
    Introduction
  2. 139. Dopants at the Atomic Limit in Silicon and Germanium (Su-PL1)
    Prof. Steven Schofield (University College London)
    27/09/2026, 16:15
    Group IV Semiconductors - I
    Invited presentation
    Plenary Session

    Controlling the placement and electronic character of dopant atoms in semiconductors lies at the heart of both classical device technology and the emerging field of semiconductor quantum computing. As device dimensions approach the single-atom limit, however, the discrete quantum-mechanical nature of individual dopants demands fundamentally new approaches to fabrication and characterisation....

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  3. 91. Scanning Spreading Resistance Microscopy as a Key Nano-Metrology Technique for Semiconductor Technology Scaling – History and Future (Su-I1)
    Lennaert Wouters (Imec)
    27/09/2026, 17:00
    Group IV Semiconductors - I
    Invited presentation
    Defect Engineering and Metrology

    The continued downscaling of nanoelectronic devices, where performance is governed by nanometer accurate doping distributions, demands metrology solutions with matching spatial resolution. Scanning Spreading Resistance Microscopy (SSRM), an AFM based technique that measures the resistance as current spreads from a high pressure induced β tin phase of silicon beneath a conductive diamond tip,...

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  4. 134. Defect mitigation strategies for next-generation, high-efficiency silicon-based solar cells (Su-I2)
    Dr Lachlan Black (The Australian National University)
    27/09/2026, 17:40
    Group IV Semiconductors - I
    Invited presentation
    Defect Engineering and Metrology

    Crystalline silicon (c-Si) solar cells are now approaching their fundamental performance limits, with voltages now limited primarily by intrinsic recombination processes. We discuss the key remaining bulk and surface defects relevant for high-efficiency commercial c-Si solar cells, as well as strategies for mitigating these defects in next-generation devices, focusing particularly on work at...

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  5. 62. Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping (Mo-I1)
    Francesca Chiodi (C2N, Université Paris Saclay)
    28/09/2026, 08:30
    Group IV Semiconductors - I
    Invited presentation
    Group IV: Hyperdoping and Defects

    Since the discovery of BCS superconductivity in silicon by nanosecond laser ultra-doping with boron, theoretical and experimental works have endeavored to understand what triggers and controls the superconducting phase. Indeed, superconducting Si has great potential to develop a cryogenic electronics with the advantages of large scale integration and high reproducibility [1,2]. Through the...

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  6. 89. Combination of layer deposition and pulsed UV laser annealing for thin GeSn:Sb layers hyperdoping (Mo-O1)
    Dr Enrico Di Russo (UNIPD-DFA)
    28/09/2026, 09:10
    Group IV Semiconductors - I
    Oral presentation
    Group IV: Hyperdoping and Defects
  7. 68. Defect characterization in monolithic integrated Ge-on-Si layers grown by Low-Energy Plasma-Enhanced Chemical Vapour Deposition (Mo-O2)
    Afonso de Cerdeira Oliveira (L-NESS (Politecnico di Milano))
    28/09/2026, 09:30
    Group IV Semiconductors - I
    Oral presentation
    Group IV: Hyperdoping and Defects
  8. 32. Hyperdoped and Highly Strained Ge:Sb layers by Pulsed Laser Melting for Next-Generation Germanium Cristalline Gamma-Ray Sources (Mo-O3)
    Francesco Sgarbossa (UNIPD and INFN-LNL)
    28/09/2026, 09:50
    Group IV Semiconductors - I
    Oral presentation
    Group IV: Hyperdoping and Defects
  9. 19. All-silicon telecom photodetectors via ion-beam engineering for photonic integration (Mo-I2)
    Yonder Berencén (Helmholtz-Zentrum Dresden Rossendorf)
    28/09/2026, 10:40
    Group IV Semiconductors - I
    Invited presentation
    Group IV for Photonics

    Silicon’s transparency in the telecommunication bands (1260–1625 nm) has traditionally required hybrid integration of materials such as germanium for photodetection, limiting scalability and CMOS compatibility [1-3]. Here, we present a strategy based on ion-beam engineering of deep-level dopants in silicon to realize all-silicon, waveguide-coupled photodetectors operating at room temperature...

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  10. 130. SiGe Forward-Reverse linearly graded buffers for mid-infrared photonics (Mo-O4)
    Davide Impelluso
    28/09/2026, 11:20
    Group IV Semiconductors - II
    Oral presentation
    Group IV for Photonics
  11. 25. GeSn Waveguide Photodetectors for Next-Generation Silicon Photonics (Mo-O5)
    Guo-En Chang (National Yang Ming Chiao Tung University)
    28/09/2026, 11:40
    Group IV Semiconductors - II
    Oral presentation
    Group IV for Photonics
  12. 101. Emergent optical and transport phenomena in hyperdoped n-type Ge (Mo-O6)
    Giulia Maria Spataro (Dipartimento di Fisica e Astronomia, Università di Padova, via Marzolo 8, 35131, Padova, Italy)
    28/09/2026, 12:00
    Group IV Semiconductors - II
    Oral presentation
    Group IV for Photonics
  13. 60. Controlled surface cleaning of MACE-nanotextured Ge for cost-efficient high-performance UV-SWIR photodetection (Mo-O7)
    Mariia Terletskaia
    28/09/2026, 12:20
    Group IV Semiconductors - II
    Oral presentation
    Group IV for Photonics
  14. 105. QSOI®: a platform for large scale quantum integrated circuits (Mo-I3)
    Bruna Cardoso Paz (Quobly)
    28/09/2026, 13:40
    Alternative Semiconductor Devices - I
    Invited presentation
    Alternative Semiconductor Devices

    Spin qubits implemented in silicon quantum dots (QDs) are among the most promising candidates for large-scale quantum computing due to their compatibility with CMOS technology and their strong potential for monolithic co-integration with control and readout electronics [1]–[3]. In this context, fully depleted silicon-on-insulator (FDSOI) technology offers unique advantages for...

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  15. 121. Cryogenic SiGe Transistors based on Modulation Acceptor Doping (Mo-O8)
    Mr Maximilian Stipkovich (Institute of Solid State Electronics, TU Wien)
    28/09/2026, 14:20
    Alternative Semiconductor Devices - I
    Oral presentation
    Alternative Semiconductor Devices
  16. 123. Non-volatile reconfigurable Al-Si transistors via ferroelectrically modulated Schottky barriers (Mo-O9)
    Daniele Nazzari (TU Wien)
    28/09/2026, 14:40
    Alternative Semiconductor Devices - I
    Oral presentation
    Alternative Semiconductor Devices
  17. 88. Photoexcited muon spin spectroscopy for studying bulk, surface, and temperature-dependent carrier recombination in silicon wafers and solar cells (Mo-O10)
    John Murphy (University of Birmingham)
    28/09/2026, 15:00
    General Issues
    Oral presentation
    Alternative Semiconductor Devices
  18. 61. Engineering Ultrasmooth Sub-Nanometer Interlayers via Chemical Modulation for Suppression of Interface Defects in Advanced Si/HfO2 MOS Technology (Mo-O11)
    Mr Yu-Chen Chang (Institute of Semiconductor Electronics, RWTH Aachen University, 52074 Aachen, Germany)
    28/09/2026, 15:20
    Alternative Semiconductor Devices - I
    Oral presentation
    Alternative Semiconductor Devices
  19. 81. From Defect-Induced Variability to Deterministic Control: Strain Gradients as a New Paradigm for Valley Engineering (Mo-I4)
    Dr Felipe Murphy-Armando (Tyndall National Institute, University College Cork, Ireland)
    28/09/2026, 16:10
    General Issues
    Invited presentation
    Defects for Advanced Semiconductor Applications
  20. 97. Low Temperature Epitaxy of Planar Hexagonal Germanium (Mo-O12)
    Mr Andrea Besana (LNESS-Politecnico di Milano)
    28/09/2026, 16:50
    General Issues
    Oral presentation
    Defects for Advanced Semiconductor Applications
  21. 116. Beyond Bulk: Interface-Driven Dopant Physics in Ultrathin Silicon-on-Insulator (Mo-O13)
    Andrea Pulici (CNR-IMM, Unit of Agrate Brianza)
    28/09/2026, 17:10
    General Issues
    Oral presentation
    Defects for Advanced Semiconductor Applications
  22. 72. W-Center Defects in Crystalline Silicon: Electronic Structure and Optical Signatures (Mo-O14)
    kaynat alvi (Tyndall National Institute, Munster Technological University, Cork, Ireland)
    28/09/2026, 17:30
    General Issues
    Oral presentation
    Defects for Advanced Semiconductor Applications
  23. 9. Admittance spectroscopy of organic-silicon heterojunction structures fabricated with ultrasound assistance (Mo-P1)
    Prof. Oleg Olikh (Taras Shevchenko National University of Kyiv)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  24. 34. Comparative study of void defect annihilation in Si (100) and Si (110) wafers during high-temperature rapid thermal processing (Mo-P2)
    Mr Takuya Kusunoki (Graduate School of Computer Science and Systems Engineering, Okayama Prefectural University, Technology Group, Technology Department, GlobalWafers Japan Co., Ltd)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  25. 22. Controlled Copper Precipitation for Rapid Point Defect Characterization in Near-Perfect Czochralski Silicon (Mo-P3)
    Shuai Yuan (Zhejiang University)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  26. 14. DFT Analysis of Gettering in Si Wafers for CMOS Image Sensors (Mo-P4)
    Dr Iori Takeda (Okayama Prefectural University)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  27. 28. Doping Engineering of Double-SOI Structures for Two-Channel Tunneling Transistors (Mo-P5)
    Dr Shengqiang Zhou (Helmholtz-Zentrum Dresden-Rossendorf)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  28. 102. Electric Field Distribution in Black Silicon Needles Under Reverse Bias: A TCAD Simulation Study (Mo-P6)
    Oskari Leiviskä (Aalto University)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  29. 15. Electrical and Optical Properties of Defect-Enhanced SiGe Heterostructures (Mo-P7)
    Kaynat Alvi (Tyndall National Institute, Munster Technological University, Cork, Ireland)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  30. 143. Electrical Properties of Dislocation-Related Defects in Ge/Si Virtual Substrates (Mo-P8)
    Henriette Tetzner
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  31. 87. Electrically detected magnetic resonance of telecom-wavelength G and C centers in silicon (Mo-P9)
    Alessandro Puddu (Helmholtz-Zentrum Dresden-Rossendorf / Technische Universität Dresden)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  32. 37. Elimination of slip lines induced by the pins in rapid thermal processing for Czochralski silicon wafers (Mo-P10)
    Yilun Wang (Zhejiang University)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  33. 76. Engineering Nanostructured Electrodes on Screen-Printed Carbon for Real-Time Monitoring of Nitrogen-Based Water Pollutants (Mo-P12)
    Dr Roberta Farina (CNR IMM sede principale)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  34. 78. Epi stacking fault defects in highly doped phosphorus 300 mm crystals (Mo-P13)
    Matteo Pannocchia (MEMC GlobalWafers)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  35. 67. Evaluation of impurity effects in magic-angle twisted bilayer graphene by machine learning interatomic potentials (Mo-P14)
    Ignazio Vacante (CNR-IMM)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  36. 43. Experimental and simulated investigation of nitrogen shallow donors in Czochralski silicon wafers doped with nitrogen (Mo-P15)
    Dr Dawid Kot
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  37. 16. Experimental observation and analysis of gliding I3 basal stacking faults in hexagonal germanium (Mo-P16)
    Mette Schouten (Eindhoven University of Technology)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  38. 82. Ge-on-Si Substrates with Porous Silicon buffer as Compliant Layer (Mo-P17)
    Dr Charlotte Weiss (Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstraße 2, 79110 Freiburg, Germany)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  39. 144. Impact of ion charge transport on perovskite solar cells simulated by TCAD Sentaurus (Mo-P18)
    Matthias Müller (TU Bergakademie Freiberg / Insitute of Applied Physics)
    28/09/2026, 19:00
    Alternative Semiconductor Devices - I
    Poster presentation
    Poster Session - 1
  40. 38. Impact of Substrate Carbon Impurities on MOSFET Breakdown Voltage via Enhanced Phosphorus Out-Diffusion in n/n⁺ Epitaxial Wafers (Mo-P19)
    Jinge Wang
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  41. 20. Infrared properties of a perfectly compensated germanium doped with shallow donors and acceptors below the Mott transition (Mo-P20)
    Dr Sergey Pavlov (German Aerospace Center)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  42. 98. Mechanism of slip line propagation in advanced 300mm silicon substrates (Mo-P21)
    Dr Alexandra Abbadie (STMicroelectronics)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  43. 74. On the formation of local molten regions on Si surfaces by pulsed laser annealing at the melting threshold (Mo-P22)
    Dr Sebastien Kerdiles (Université Grenoble-Alpes, CEA-LETI, France)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  44. 35. On the gettering properties of isovalent tin and lead impurities in n-type Czochralski silicon (Mo-P23)
    Dr Mykola Kras’ko (Institute of Physics of the NAS of Ukraine)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  45. 36. Optically detected spin properties of the telecom L-band C center in silicon (Mo-P24)
    Shuyu Wen (Helmholtz-Zentrum Dresden-Rossendorf)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  46. 51. Origin of optically active Er3+ sites in Silicon on Insulator-based photonic waveguides (Mo-P25)
    Yanan Xu
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  47. 71. Progress in understanding optically detected magnetic resonance (ODMR) spectra of ASi-Sii-defects (Mo-P26)
    Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  48. 83. Pulsed Laser Melting for TOPCon technology: new routes to higher efficiency (Mo-P27)
    Francesco Sgarbossa (Dfa unipd)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  49. 94. Radiation-induced defect reactions in Silicon Junction Barrier Schottky Diodes upon irradiation with alpha particles in different regimes (Mo-P28)
    Dr Vladimir Markevich (The University of Manchester)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  50. 5. Search for stable atomic configurations in SiGe, SiSn, and GeSn alloys using DFT and optimization algorithms (Mo-P29)
    Koji Sueoka
    28/09/2026, 19:00
    Group IV Semiconductors - II
    Poster presentation
    Poster Session - 1
  51. 111. Structure loss during the Czochralski silicon process: causes, remedies and ML aid (Mo-P30)
    Marisa Di Sabatino (NTNU)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  52. 80. Superacid-based diagnosis of damage in high-carrier-lifetime crystalline silicon (Mo-P31)
    Sophie Pain (University of Birmingham)
    28/09/2026, 19:00
    Group IV Semiconductors - V
    Poster presentation
    Poster Session - 1
  53. 127. Surface passivation of silicon by ZnO/Al2O3 stacks with controlled SiOx interlayers (Mo-P32)
    John Murphy (University of Birmingham)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  54. 13. Theoretical study on the stability of Sn atom in Ge thin film grown on GaSb substrates (Mo-P33)
    Dr Koji Ozawa (Graduate School of Computer Science and Systems Engineering, Okayama Prefectural University)
    28/09/2026, 19:00
    Poster presentation
    Poster Session - 1
  55. 146. Defects identification, testing and screening for reliable SiC devices (Tu-I1)
    Dr Salvatore Coffa (Robert BOSCH)
    29/09/2026, 08:30
    Invited presentation
    Silicon Carbide
  56. 73. SiC color centers for quantum sensing: an Electro-Luminescence based approach for their investigation (Tu-O1)
    Dr Giorgio Migliore (CNR-IMM & UNICT-DFA)
    29/09/2026, 09:10
    Wide Band Gap Materials - I
    Oral presentation
    Silicon Carbide
  57. 52. Benchmarking single Er3+ coherence in Silicon Carbide on Insulator-based micropillars (Tu-O2)
    Alexey Lyasota (Centre for Quantum Computation and Communication Technology (CQC2T), School of Physics, The University of New South Wales, Sydney NSW 2052, Australia)
    29/09/2026, 09:30
    Wide Band Gap Materials - I
    Oral presentation
    Silicon Carbide
  58. 7. Exploring erbium quantum emission in CMOS compatible hexagonal Silicon Carbide on Insulator photonics (Tu-O3)
    Prof. Stefania Castelletto (RMIT), Alexey Lyasota (UNSW)
    29/09/2026, 09:50
    Wide Band Gap Materials - I
    Oral presentation
    Silicon Carbide
  59. 33. Gate-defined quantum circuits in silicon-germanium heterostructures (Tu-I2)
    Dominique Bougeard
    29/09/2026, 10:40
    Group IV Semiconductors - III
    Invited presentation
    Silicon, Germanium and their Alloys I
  60. 92. UV-nanosecond laser hyperdoping of Ge/Si and SiGe/Si epilayers (Tu-O4)
    Benedetta Scandolara (University of Padua, Department of Physics and Astronomy “Galileo Galilei”)
    29/09/2026, 11:20
    Group IV Semiconductors - III
    Oral presentation
    Silicon, Germanium and their Alloys I
  61. 23. Crystallization of Sn-rich Si and Ge thin films by flash lamp annealing (Tu-O5)
    Lars Rebohle
    29/09/2026, 11:40
    Group IV Semiconductors - III
    Oral presentation
    Silicon, Germanium and their Alloys I
  62. 77. Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys. (Tu-O6)
    Enrico Di Russo (Università di Padova)
    29/09/2026, 12:00
    Group IV Semiconductors - III
    Oral presentation
    Silicon, Germanium and their Alloys I
  63. 122. Positron trapping in highly p-type Ge (Tu-O7)
    Pejk Amoroso (University of Helsinki)
    29/09/2026, 12:20
    Group IV Semiconductors - III
    Oral presentation
    Silicon, Germanium and their Alloys I
  64. 50. GeSn Semiconductors: A Tale of Defects and Devices (Tu-I3)
    Oussama Moutanabbir (École Polytechnique de Montréal)
    29/09/2026, 13:40
    GeSn Special Session I
    Invited presentation
    GeSn Special Session - LASTSTEP Project
  65. 86. Material and Design Trade-offs in GeSn-Based MQW Lasers on Silicon (Tu-O8)
    Dan Buca (Forschungszentrum Juelich)
    29/09/2026, 14:20
    GeSn Special Session I
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  66. 49. Room-Temperature Optical Gain Analysis in Biaxially Strained Bulk GeSn for Mid-Infrared Silicon Photonics (Tu-O9)
    Walid Belaid (University of Leeds)
    29/09/2026, 14:40
    GeSn Special Session I
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  67. 115. MBE Growth of Sn/Ge MQW Structures (Tu-O10)
    Michael Oehme
    29/09/2026, 15:00
    GeSn Special Session I
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  68. 124. Germanium tin on insulator, a suitable platform for electrically driven Mid-IR emitters and detectors (Tu-O11)
    Moustapha EL Kurdi (LTCI, Telecom Paris, Institut Polytechnique de Paris)
    29/09/2026, 15:20
    GeSn Special Session I
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  69. 47. SiGeSn Technology for Monolithic Infrared Silicon Photonics (Tu-I4)
    Wei Du (University of Arkansas)
    29/09/2026, 16:10
    GeSn Special Session II
    Invited presentation
    GeSn Special Session - LASTSTEP Project
  70. 46. Improving the performance of GeSn infrared photodetectors on Si through nanoscale engineering (Tu-O12)
    Mr Théophile Willoquet (University Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, Grenoble, France)
    29/09/2026, 16:50
    GeSn Special Session II
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  71. 100. Influence of Electrode Geometry and Thermal Annealing on the Electroluminescence of GeSn LEDs (Tu-O13)
    Paul Goulain (CEA-IRIG, CEA-LETI)
    29/09/2026, 17:10
    GeSn Special Session II
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  72. 125. High Sn content GeSn-based Avalanche PhotoDiode for Medium InfraRed detection (Tu-O14)
    Lorenzo Finazzi (POLIMI)
    29/09/2026, 17:30
    GeSn Special Session II
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  73. 21. Operando study of device heating using full-field x-ray diffraction microscopy (Tu-O15)
    Giovanni Capellini
    29/09/2026, 17:50
    GeSn Special Session II
    Oral presentation
    GeSn Special Session - LASTSTEP Project
  74. 79. Ab Initio Modeling of Surface-Induced Effects on Quantum Gate Fidelity in 3C-SiC Divacancy Qubits (Tu-P1)
    Dr Ioannis Deretzis (Consiglio Nazionale delle Ricerche- Istituto per la Microelettronica e Microsistemi)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  75. 10. Atomic-scale mechanism of step-edge-induced stacking fault evolution during HVPE growth of (100) β-Ga2O3 (Tu-P2)
    Prof. Deren Yang (Zhejiang University)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  76. 109. Atomic-scale microscopy insights into order and disorder phenomena in AlxGa1-xN (Tu-P3)
    Enrico Di Russo (Università di Padova)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  77. 31. Deep Level Defects in β-Ga2O3: Insights from Hydrogenation and Oxygen Annealing Studies (Tu-P5)
    Vladimir Kolkovsky
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  78. 117. Defect Engineering and Passivation at Halide Perovskite and Kesterite Nanoparticles Interface: A Combined Experimental and DFT Study (Tu-P7)
    Vanira Trifiletti (University of Milano-Bicocca)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  79. 39. Defect studies and down conversion strategies of double-cation mixed perovskite solar cells (Tu-P8)
    Corrado Del Conte (Department of Physics and Astronomy – Alma Mater Studiorum University of Bologna, Viale Berti-Pichat 6/2, Bologna 40127, Italy)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  80. 11. Defect Suppression in Boron-Doped MW-PECVD-Grown (113)-Oriented Diamond Substrates for Vertical Power Schottky Diodes (Tu-P9)
    Pavel Hazdra (Czech Technical University in Prague, Dept. Microelectronics)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  81. 57. Detection of nuclei for oxidation induced stacking faults (Tu-P10)
    Kaisla Sutinen (Aalto University, Department of Electronics and Nanoengineering)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  82. 56. Elaboration of 200 mm GeSnOI via Bonded Etch-Back SOI process (Tu-P11)
    Mr Jeremie Chretien (CEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, France)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  83. 12. Estimating recombination-active defect concentrations in silicon n+–p–p+ structures via transfer learning from computer vision models (Tu-P12)
    Prof. Oleg Olikh (Taras Shevchenko National University of Kyiv)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  84. 8. Identification of the dominant trap states in mixed halide perovskite pellets (Tu-P13)
    Mahsa Masoud (Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy and Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin, Italy)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  85. 55. Impact of Ionic Defects on Mesoporous Perovskite Solar Cells and X-Ray Detectors (Tu-P14)
    Gaetano Calogero (CNR-IMM, Catania, Italy)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  86. 110. Lithium-free segmentable hyperpure germanium detector via Pulsed Laser Melting (Tu-P15)
    Francesco Sgarbossa (Dfa unipd)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  87. 30. Magnetron-Sputtered HfO2 Thin Films for Microelectronic and Sensor Applications (Tu-P6)
    Dr Vladimir Kolkovsky
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  88. 93. Monolithic GeSn Photodetectors Integrated on Silicon for Mid-Infrared Applications (Tu-P16)
    Vincent Reboud (CEA LETI)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  89. 63. Multiparametric Control of MAPbI₃ Growth via Low-Vacuum Proximity-Space Effusion (Tu-P17)
    Dr Valentina Arena (CNR-IMM)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  90. 6. Non-destructive light scattering-based bulk micro defect detection in silicon wafers (Tu-P18)
    Szilard Pothorszky
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  91. 113. Novel method to measure the temperature-dependent minority carrier lifetime of crystalline silicon wafers for solar cell applications (Tu-P19)
    Marisa Di Sabatino (NTNU)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  92. 66. Optical Characterisation of Colour Centres in Nitride Layers (Tu-P20)
    Ms Amy Albrecht (Technische Universität Bergakademie Freiberg)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  93. 90. Origin and evolution of basal dislocations in HVPE grown GaN (Tu-P21)
    Dr Ulrich Bläß (Fraunhofer Institute for Integrated Systems and Device Technology, IISB)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  94. 42. Oxygen diffusion in Aluminium-Nitride (Tu-P22)
    Hartmut Bracht, Tröger-Neuhaus
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  95. 131. Photo electrical characterization of the interface states in dielectric/AlGaN/GaN structures (Tu-P24)
    Gabriele Seguini (CNR-IMM, Unit of Agrate Brianza)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  96. 133. Photo-elastic Characterization of InP Wafers (Tu-P23)
    Martin Herms (PVA Metrology & Plasma Solutions GmbH)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  97. 75. Photoluminescence spectroscopy study on hydride vapour phase epitaxy grown GaN:Mn using metal-organic precursor doping approach (Tu-P25)
    Kuei-Shen Hsu (Technische Universität Bergakademie Freiberg, Institute of Applied Physics)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  98. 119. Response Surface Modelling for a Vertical GaN HVPE Reactor within a Constrained Design Space (Tu-P26)
    Dr Jiri Tomkovic (Institute of Applied Physics, TU Bergakademie Freiberg)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  99. 29. Strain-controlled directness and confinement margins in CGeSn/(Si)GeSn MQW emitters on (001) Ge/Si (Tu-P27)
    Walid Belaid (School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  100. 17. Study of Defect Physics in Zirconia MIM Capacitors (Tu-P28)
    Nishant Saini
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  101. 114. Synthesis of artificial graphene in the AlGaN/GaN heterostructure through block copolymer self-assembly (Tu-P29)
    Anita Patelli (Università del Piemonte Orientale)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  102. 107. Synthesis of supersaturated GeSn alloys on Ge and Ge-on-Si by sputter deposition and nanosecond pulsed laser melting (Tu-P30)
    Enrico Di Russo (Università di Padova)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  103. 53. Towards Scalable Flexible Kesterite-based solar cells: Addressing Bulk and Interface Defects through Drop-on-Demand Inkjet Printing (Tu-P31)
    Prof. Simona Binetti (Università degli Studi di Milano-Bicocca)
    29/09/2026, 19:00
    Poster presentation
    Poster Session - 2
  104. 135. Controlling formation of single photon emitting colour centres in MOVPE of gallium nitride (We-I1)
    Rachel Oliver (University of Cambridge)
    30/09/2026, 08:30
    Wide Band Gap Materials - II
    Invited presentation
    Nitride Semiconductors

    Point defects in gallium nitride (GaN) have recently emerged as a promising platform for room-temperature single-photon generation, exhibiting high emission rates and robust optical properties. GaN also benefits from well-established fabrication processes due to its widespread use in applications such as solid-state lighting and high power and high frequency electronics. Whilst wafers of bulk...

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  105. 104. Photo-induced emission hopping of bright and regularly occurring native quantum emitters in AlN grown by molecular beam epitaxy (We-O1)
    Sébastien Pezzagna
    30/09/2026, 09:10
    Wide Band Gap Materials - II
    Oral presentation
    Nitride Semiconductors
  106. 84. Non-destructive visualization of the threading dislocation content in PVT-grown bulk AlN on wafer scale (We-O2)
    Leon Schiller (Fraunhofer IISB)
    30/09/2026, 09:30
    Wide Band Gap Materials - II
    Oral presentation
    Nitride Semiconductors
  107. 59. Plasma enhanced Atomic Layer Etching on Nitrides and SiC for high power and photonic application (We-I2)
    Dr Franziska C. Beyer (deutsch)
    30/09/2026, 09:50
    Wide Band Gap Materials - II
    Invited presentation
    Nitride Semiconductors
  108. 132. Metal-Halide Perovskites and Their “Magic” Defects (Th-I1)
    Ivan Scheblykin (Chemical Physics and NanoLund, Lund University, Sweden)
    01/10/2026, 08:30
    Alternative Semiconductor Devices - I
    Invited presentation
    Perovskites and their Applications
  109. 103. Unravel the contribution of Bulk and Surface States in 2D-layered Perovskite by means of Photocurrent Spectroscopies (Th-O1)
    Andrea Ciavatti (Department of Physics and Astronomy - University of Bologna)
    01/10/2026, 09:10
    Alternative Semiconductor Devices - I
    Oral presentation
    Perovskites and their Applications
  110. 65. Atomistic Engineering of Nucleation and Defect-Mediated Phase Stability in MAPI Perovskites: An AI-Driven Computational Framework (Th-O2)
    Giuseppe Fisicaro (CNR Istituto per la Microelettronica e Microsistemi)
    01/10/2026, 09:30
    Alternative Semiconductor Devices - II
    Oral presentation
    Perovskites and their Applications
  111. 48. Evaluating Structural Stability and Optoelectronic Properties of Lead-Free Metal Halide Perovskite Thin Films (Th-O3)
    Vanira Trifiletti (University of Milano-Bicocca)
    01/10/2026, 09:50
    Alternative Semiconductor Devices - I
    Oral presentation
    Perovskites and their Applications
  112. 145. Diffusion and Defect Reactions in Semiconductors: Progress and Challenges (Th-I2)
    Prof. Hartmut Bracht
    01/10/2026, 10:40
  113. 41. Diffusion of p-type dopants in Germanium (Th-O4)
    Lena-Maria Sinz
    01/10/2026, 11:20
    Group IV Semiconductors - IV
    Oral presentation
    Silicon, Germanium and their Alloys II
  114. 126. Shallow junction formation in silicon by laser annealing of phosphorus end-terminated polymers (Th-O5)
    Gaetano Calogero (CNR-IMM)
    01/10/2026, 11:40
    Group IV Semiconductors - IV
    Oral presentation
    Silicon, Germanium and their Alloys II
  115. 45. Modulation Acceptor Doping of Silicon: Induced defects in SiO2 for hole generation in impurity-free Si (Th-O6)
    Daniel Hiller (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)
    01/10/2026, 12:00
    Group IV Semiconductors - IV
    Oral presentation
    Silicon, Germanium and their Alloys II
  116. 69. Beyond the Statistical Indeterminism of Ion Implantation: Toward Deterministic Nanoscale Doping and Defect Engineering (Th-O7)
    Giuseppe D'Arrigo (CNR-IMM)
    01/10/2026, 12:20
    Group IV Semiconductors - IV
    Oral presentation
    Silicon, Germanium and their Alloys II
  117. 24. Dopant atom engineering quantum dot single-electron transistors and memory in silicon (Th-I3)
    Prof. Zahid Durrani (Imperial College London)
    01/10/2026, 13:40
    Low-Dimensional Semiconductors
    Invited presentation
    Low Dimensional Semiconductors
  118. 120. Tuning Kondo effect via two-dimensional confinement in highly doped silicon-on-insulator (Th-O8)
    Gabriele Seguini (CNR-IMM Agrate Brianza)
    01/10/2026, 14:20
    Low-Dimensional Semiconductors
    Oral presentation
    Low Dimensional Semiconductors
  119. 3. Engineering 1DEG system in pure silicon (Th-O9)
    Teimuraz Mtchedlidze (Mchedlidze) (Institute of Applied Physics, Technische Universität Bergakademie, 09599 Freiberg, Germany)
    01/10/2026, 14:40
    Low-Dimensional Semiconductors
    Oral presentation
    Low Dimensional Semiconductors
  120. 54. Exploring quantum effects and structural interplays in graphene-derived functional materials for sensing and beyond (Th-O10)
    Damiano Ricciarelli (CNR-IMM)
    01/10/2026, 15:00
    Low-Dimensional Semiconductors
    Oral presentation
    Low Dimensional Semiconductors
  121. 44. Sputter deposition and pulsed laser crystallisation of MoS2 films (Th-O11)
    Daniele Demeneghi (Università degli Studi di Padova)
    01/10/2026, 15:20
    Low-Dimensional Semiconductors
    Oral presentation
    Low Dimensional Semiconductors
  122. 27. Laboratory Photoluminescence imaging apparatus for identifying crystallographic defects in silicon (Th-I4)
    Isabella Mica (STMicroelectronics)
    01/10/2026, 16:10
    Advanced Characterization - I
    Invited presentation
    Advanced Characterization Techniques
  123. 70. A charge decoupling method to infer bulk recombination in high quality silicon wafers (Th-O12)
    Nicholas Grant (University of Warwick)
    01/10/2026, 16:50
    Advanced Characterization - I
    Oral presentation
    Advanced Characterization Techniques
  124. 85. Beyond Conventional DLTS: Direct Observation of Isotope Shifts in Deep-Level Emission Using Laplace DLTS (Th-O13)
    Vladimir Kolkovsky
    01/10/2026, 17:10
    Advanced Characterization - I
    Oral presentation
    Advanced Characterization Techniques
  125. 128. Defect Profiling in AlInGaP Alloys via MOS Impedance Spectroscopy (Th-O14)
    Paolo La Torraca (Tyndall National Institute)
    01/10/2026, 17:30
    Advanced Characterization - I
    Oral presentation
    Advanced Characterization Techniques
  126. 40. 3D chemical mapping of dopant distribution in epitaxially grown heavily doped Si:P and SiGe:B using atom probe tomography (Th-O15)
    Maryna Dryhailo (CEA-Leti & SIMaP, Grenoble INP)
    01/10/2026, 17:50
    Advanced Characterization - I
    Oral presentation
    Advanced Characterization Techniques
  127. 64. Hydrogen migration in ALD-grown dielectrics for silicon surface passivation (Fr-O1)
    Sophie Pain (University of Birmingham)
    02/10/2026, 08:30
    Alternative Semiconductor Devices - I
    Oral presentation
    Silicon for Photovoltaics and Microelectronics
  128. 106. Investigation of Pinholes Opening in Silicon Solar Cell Passivated Contacts Induced by Pulsed Laser Annealing (Fr-O2)
    Gianmarco Puggioni (Università di Padova)
    02/10/2026, 08:50
    General Issues
    Oral presentation
    Silicon for Photovoltaics and Microelectronics
  129. 96. Impact of metallic contamination and gettering in bipolar technologies (Fr-O3)
    Dr Alexandra Abbadie (STMicroelectronics)
    02/10/2026, 09:10
    General Issues
    Oral presentation
    Silicon for Photovoltaics and Microelectronics
  130. 4. Atomic structures and stability of large-sized vacancy clusters and finite-size extended interstitial defects in silicon: A neural-network potential and first-principles study (Fr-O4)
    Prof. Koji Sueoka (Okayama Prefectural University)
    02/10/2026, 09:30
  131. 26. Diffusion and gettering mechanism of critical metals in 300mm silicon substrates (Fr-O5)
    Oceane Fevrier
    02/10/2026, 09:50
    General Issues
    Oral presentation
    Silicon for Photovoltaics and Microelectronics
  132. 95. TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing (Fr-O6)
    Antonio Massimiliano Mio (Institute for Microelectronics and Microsystems, National Research Council (CNR-IMM), Strada VIII, 5, 95121, Catania, Italy)
    02/10/2026, 10:10
    General Issues
    Oral presentation
    Silicon for Photovoltaics and Microelectronics
  133. 138. Instructions for Authors