GADEST 2026

Session

Group IV for Photonics

G4S-2

28 Sept 2026, 10:40

GADEST 2026 - San Servolo Island, Venice (Italy)

19. All-silicon telecom photodetectors via ion-beam engineering for photonic integration

Yonder Berencén (Helmholtz-Zentrum Dresden Rossendorf)

28/09/2026, 10:40

Group IV Semiconductors - I

Invited presentation

Silicon’s transparency in the telecommunication bands (1260–1625 nm) has traditionally required hybrid integration of materials such as germanium for photodetection, limiting scalability and CMOS compatibility [1-3]. Here, we present a strategy based on ion-beam engineering of deep-level dopants in silicon to realize all-silicon, waveguide-coupled photodetectors operating at room temperature...

130. SiGe Forward-Reverse linearly graded buffers for mid-infrared photonics

Jacopo Frigerio (Politecnico Di Milano)

28/09/2026, 11:20

Group IV Semiconductors - II

Oral presentation

25. GeSn Waveguide Photodetectors for Next-Generation Silicon Photonics

Guo-En Chang (National Yang Ming Chiao Tung University)

28/09/2026, 11:40

Group IV Semiconductors - II

Oral presentation

101. Emergent optical and transport phenomena in hyperdoped n-type Ge

Giulia Maria Spataro (Dipartimento di Fisica e Astronomia, Università di Padova, via Marzolo 8, 35131, Padova, Italy)

28/09/2026, 12:00

Group IV Semiconductors - II

Oral presentation

60. Controlled surface cleaning of MACE-nanotextured Ge for cost-efficient high-performance UV-SWIR photodetection

Mariia Terletskaia

28/09/2026, 12:20

Group IV Semiconductors - II

Oral presentation