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GADEST 2026

27 September 2026 to 2 October 2026
GADEST 2026 - San Servolo Island, Venice (Italy)
Europe/Rome timezone

Session

Silicon, germanium and their alloys II

G4S-4
1 Oct 2026, 10:40
GADEST 2026 - San Servolo Island, Venice (Italy)

GADEST 2026 - San Servolo Island, Venice (Italy)

Presentation materials

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  1. 140. A theoretical perspective of defects in silicon and germanium: From nanoelectronics to quantum computing
    01/10/2026, 10:40
    Invited presentation
  2. 41. Diffusion of p-type dopants in Germanium
    Bracht, Sinz
    01/10/2026, 11:20
    Group IV Semiconductors - IV
    Oral presentation
  3. 126. Shallow junction formation in silicon by laser annealing of phosphorus end-terminated polymers
    Gaetano Calogero (CNR-IMM)
    01/10/2026, 11:40
    Group IV Semiconductors - IV
    Oral presentation
  4. 45. Modulation Acceptor Doping of Silicon: Induced defects in SiO2 for hole generation in impurity-free Si
    Daniel Hiller (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)
    01/10/2026, 12:00
    Group IV Semiconductors - IV
    Oral presentation
  5. 69. Beyond the Statistical Indeterminism of Ion Implantation: Toward Deterministic Nanoscale Doping and Defect Engineering
    Giuseppe D'Arrigo (CNR-IMM)
    01/10/2026, 12:20
    Group IV Semiconductors - IV
    Oral presentation
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