GADEST 2026

Session

Group IV: Hyperdoping and Defects

G4S-1

28 Sept 2026, 08:30

GADEST 2026 - San Servolo Island, Venice (Italy)

62. Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping

Francesca Chiodi (C2N, Université Paris Saclay)

28/09/2026, 08:30

Group IV Semiconductors - I

Invited presentation

Since the discovery of BCS superconductivity in silicon by nanosecond laser ultra-doping with boron, theoretical and experimental works have endeavored to understand what triggers and controls the superconducting phase. Indeed, superconducting Si has great potential to develop a cryogenic electronics with the advantages of large scale integration and high reproducibility [1,2]. Through the...

89. Combination of layer deposition and pulsed UV laser annealing for thin GeSn:Sb layers hyperdoping

Dr Richard Daubriac (UNIPD-DFA)

28/09/2026, 09:10

Group IV Semiconductors - I

Oral presentation

68. Defect characterization in monolithic integrated Ge-on-Si layers grown by Low-Energy Plasma-Enhanced Chemical Vapour Deposition

Afonso de Cerdeira Oliveira (L-NESS (Politecnico di Milano))

28/09/2026, 09:30

Group IV Semiconductors - I

Oral presentation

32. Hyperdoped and Highly Strained Ge:Sb layers by Pulsed Laser Melting for Next-Generation Germanium Cristalline Gamma-Ray Sources

Francesco Sgarbossa (UNIPD and INFN-LNL)

28/09/2026, 09:50

Group IV Semiconductors - I

Oral presentation