GADEST 2026

Session

Defect Engineering and Metrology

DEM

27 Sept 2026, 17:00

GADEST 2026 - San Servolo Island, Venice (Italy)

91. Scanning Spreading Resistance Microscopy as a Key Nano-Metrology Technique for Semiconductor Technology Scaling – History and Future

Lennaert Wouters (Imec)

27/09/2026, 17:00

Group IV Semiconductors - I

Invited presentation

The continued downscaling of nanoelectronic devices, where performance is governed by nanometer accurate doping distributions, demands metrology solutions with matching spatial resolution. Scanning Spreading Resistance Microscopy (SSRM), an AFM based technique that measures the resistance as current spreads from a high pressure induced β tin phase of silicon beneath a conductive diamond tip,...

134. Defect mitigation strategies for next-generation, high-efficiency silicon-based solar cells

Dr Lachlan Black (The Australian National University)

27/09/2026, 17:40

Group IV Semiconductors - I

Invited presentation

Crystalline silicon (c-Si) solar cells are now approaching their fundamental performance limits, with voltages now limited primarily by intrinsic recombination processes. We discuss the key remaining bulk and surface defects relevant for high-efficiency commercial c-Si solar cells, as well as strategies for mitigating these defects in next-generation devices, focusing particularly on work at...