GADEST 2026

27 Sept 2026, 13:00 → 2 Oct 2026, 13:30 Europe/Rome

GADEST 2026 - San Servolo Island, Venice (Italy)

Enrico Napolitani (University of Padova, Italy), Michele Perego (IMM-CNR, Unit of Agrate Brianza, Italy), Daniela Cavalcoli (University of Bologna, Italy), Simona Binetti (University of Milano-Bicocca, Italy), Antonino La Magna (CNR-IMM, Catania, Italy)

Welcome to GADEST 2026!
Join us for the 21st edition of the International Conference on Gettering and Defect Engineering in Semiconductor Technology.
The event will take place on the unique San Servolo Island in the Venetian lagoon.

GADEST 2026 will bring together scientists, engineers, and industry experts to discuss the latest advances in defect physics, semiconductor processing, and device technology.
We look forward to welcoming you to Venice for an inspiring week of science, networking, and cultural exchange.

Scope

Since 1985, the GADEST conference series has provided a high-level international forum for scientists and engineers working in the field of defects in semiconductors, materials science, and device technology. GADEST fosters close interaction between academia and industry, addressing both fundamental research and technological applications.

The GADEST conference is devoted to semiconductor defect physics, materials science and device technology and focuses on both fundamental as well as technological aspects of defects, growth, processing and modelling of electronic materials and devices, ranging from microelectronics to photovoltaics.

Conference language: English

Important Dates

• Abstract submission extended deadline: March 8, 2026
• Notification of abstract acceptance: April 2, 2026
• Early-bird registration deadline: June 22, 2026 (*)
• Regular registration deadline: September 6, 2026 (*)
• Conference: September 27 – October 2, 2026

(*) Accomodation in San Servolo will not be guaranteed after the early-bird registration deadline of June 22, 2026 

Important Dates

The conference chairs as well as the local team can be contacted via e-mail to: gadest2026@dfa.unipd.it

Patronage

abstract_template_GADEST2026.docx

Accommodation Form GADEST 2026.pdf

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Sunday 27 September

13:00 → 15:25 Registration

15:25 → 15:40 Introduction

15:25 Welcome Speech

15:40 → 17:00 Plenary Session

15:40 GADEST on the interface between Basic Research and Engineering

Speaker: Prof. Hans Richter

16:15 Dopants at the Atomic Limit in Silicon and Germanium

Controlling the placement and electronic character of dopant atoms in semiconductors lies at the heart of both classical device technology and the emerging field of semiconductor quantum computing. As device dimensions approach the single-atom limit, however, the discrete quantum-mechanical nature of individual dopants demands fundamentally new approaches to fabrication and characterisation. Understanding how a dopant wavefunction is shaped by its host crystal, and how quantum confinement evolves as doped layers approach atomic thickness, are central questions that bridge fundamental defect physics and device engineering.

In this talk, I will present an overview of our group’s recent work on atomic-scale dopant systems in silicon and germanium, combining ultrahigh vacuum scanning tunnelling microscopy (STM), soft X-ray angle-resolved photoemission spectroscopy (SX-ARPES), and theoretical modelling. We explore how dopant species, host material, and fabrication pathways influence incorporation, electronic structure, and quantum confinement. These studies include the development of alternative dopant chemistries enabling high-yield incorporation, the realisation of ultra-confined electronic systems in atomically thin doped layers, and the direct imaging of anisotropic dopant wavefunctions in silicon arising from the interplay of crystal symmetry and quantum confinement [1–5].

Taken together, this work advances atomic-scale control of dopant placement in silicon and germanium, and provides new insight into how atomic-scale structure and chemistry govern the electronic states of dopants and dopant structures in semiconductors.

[1] Schofield et al., Nano Futures 2025, 9, 012001.
[2] Siegl et al., Nano Lett. 2025, 25, 13996.
[3] Hofmann et al., Angew. Chem. Int. Ed. 2023, 62, e202213982.
[4] Constantinou et al., Nat. Commun. 2024, 15, 694.
[5] Constantinou et al., Adv. Sci. 2023, 10, 2302101.

Speaker: Prof. Steven Schofield (University College London)

17:00 → 18:20 Defect Engineering and Metrology

17:00 Scanning Spreading Resistance Microscopy as a Key Nano-Metrology Technique for Semiconductor Technology Scaling – History and Future

The continued downscaling of nanoelectronic devices, where performance is governed by nanometer accurate doping distributions, demands metrology solutions with matching spatial resolution. Scanning Spreading Resistance Microscopy (SSRM), an AFM based technique that measures the resistance as current spreads from a high pressure induced β tin phase of silicon beneath a conductive diamond tip, has met this need for over three decades [1]. The resulting spreading resistance is directly related to local resistivity, enabling reliable electrical characterization from lightly doped channel regions to heavily doped source/drain contacts. With calibration measurements on reference samples containing layers of known carrier concentration, spreading resistance maps can be converted into quantitative active carrier profiles, establishing SSRM as a key technique for carrier metrology.
In my talk, I will overview how SSRM has evolved from a two dimensional mapping method suitable for early planar transistors into a tomographic nanoscale sensing method, known as scalpel SSRM, capable of true 3D carrier mapping in state of the art device architectures such as FinFETs, nanosheet FETs, and complementary FETs. I will also discuss force modulated FFT SSRM, which addresses parasitic resistances inherent to confined device volumes and thereby significantly improves spreading resistance sensitivity. Beyond silicon CMOS, I will show how SSRM has been applied extensively to solar cell and III–V semiconductor characterization. The implementation of artificial intelligence for automated quantitative SSRM processing will be presented as an example case to demonstrate how AI can accelerate SSRM data analysis. Finally, I will highlight essential diamond probe technology advances for improvements in spatial resolution.
Looking ahead, I will introduce emerging concepts such as in situ SSRM integrated with FIB SEM TEM to facilitate site-specific analysis, and multi probe approaches that bridge the low pressure regime used for high resolution mapping with the high pressure regime required for tomographic imaging. Together, these developments sustain SSRM’s position as a powerful and versatile tool for probing nanoscale electrical information in future semiconductor technologies.

[1] M. A. R. Laskar, L. Wouters, P. Lagrain, J. Serron, N. Peric, A. Pondini, P. Eyben, T. Hantschel and U. Celano, Appl. Phys. Rev. 2025, 12, 041305.

Speaker: Lennaert Wouters (Imec)

17:40 Defect mitigation strategies for next-generation, high-efficiency silicon-based solar cells

Crystalline silicon (c-Si) solar cells are now approaching their fundamental performance limits, with voltages now limited primarily by intrinsic recombination processes. We discuss the key remaining bulk and surface defects relevant for high-efficiency commercial c-Si solar cells, as well as strategies for mitigating these defects in next-generation devices, focusing particularly on work at ANU.
Remaining bulk defects include various defects related to oxygen complexes in Czochralski-grown silicon, including thermal donors and oxygen precipitates, as well as residual levels of metallic contamination (especially Fe). The former manifest for example in so-called “ring” defects, and can be mitigated by high-temperature treatments, while the latter can be reduced to trace levels via gettering by heavily doped regions, dielectric passivation layers, or polysilicon contacts. We show that with the aid of such treatments, the bulk lifetime in commercial c-Si wafers now closely approaches the intrinsic Auger limit.
Surface passivation in recent high-efficiency devices has also improved to the point that surface defects no longer significantly limit the cell voltage. Therefore, future innovation in surface and contact passivation for c-Si devices need not improve on current state-of-the-art levels of passivation, but only maintain these while reducing other losses (i.e. transport and optical losses) or realising other advantages such as reduced process cost or improved stability. In particular, degradation of surface passivation due to defect generation under ultraviolet light has re-emerged as a key concern for device stability in the field. We discuss the potential role of alternative passivation species such as chlorine in place of or in addition to hydrogen, and their potentially beneficial properties for stability. We also highlight some emerging potential alternatives to conventional passivation and contact layers that may offer benefits such as improved optical transparency, contact properties or stability.

Speaker: Dr Lachlan Black (The Australian National University)

19:00 → 22:00 Dinner

Monday 28 September

08:30 → 10:10 Group IV: Hyperdoping and Defects

08:30 Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping

Since the discovery of BCS superconductivity in silicon by nanosecond laser ultra-doping with boron, theoretical and experimental works have endeavored to understand what triggers and controls the superconducting phase. Indeed, superconducting Si has great potential to develop a cryogenic electronics with the advantages of large scale integration and high reproducibility [1,2]. Through the optimization of the nanosecond laser temporal profile, we achieved an excellent control of both the electrical and structural properties of ultra-doped Si thin layers, with a maximum carrier concentration of 8 at.%, the state of the art, in monocrystalline epilayers with few defects, 100% dopant activation up to and above the solubility limit, and a vertically homogeneous doping profile [1-3].
The control and improvement of the active doping is directly reflected in the control of the superconducting critical temperature Tc of such disordered superconductor, increased by 30% in this optimized setup, in agreement with theory and opposite to previous results (Fig.1) [4].
Furthermore, we demonstrated that superconductivity is not only controlled by doping, but also by the lattice deformation. Thus, it is possible to tune up to 50% Tc by modifying by 1% the lattice parameter, as shown through nanosecond laser incorporation of Ge up to 20 at.% [5].
Mastering and understanding the materials properties has brought to the development of all-silicon devices, such as Josephson junctions and superconducting microwave resonators [6].
Indeed, SQUIDs and Josephson junctions were developed [7], thanks to the excellent, epitaxial, transparent interface between superconducting Si and semiconducting Si, that we have characterized both at room temperature and at sub-K temperatures as a function of the semiconductor doping.

[1] F. Chiodi, et al., Laser Annealing Processes in Semiconductor Technology (Elsevier), ch.9 (2021)
[2] Y. Baron et al., Appl. Phys. Lett. Materials 12 (12), (2024)
[3] G. Hallais, et al., Semicond. Sci.Tech. 38, 034003 (2023)
[4] L. Desvignes. PhD thesis, Université Paris Saclay (2023)
[5] S. Nath, et al., Phys. Status Solidi A, 221: 2400313 (2024)
[6] P. Bonnet, F. Chiodi, et al., Phys. Rev. Applied 17, 034057 (2022)
[7] F. Chiodi, et al., Phys. Rev. B 96, 024503 (2017)

Speaker: Francesca Chiodi (C2N, Université Paris Saclay)

09:10 Combination of layer deposition and pulsed UV laser annealing for thin GeSn:Sb layers hyperdoping

Speaker: Dr Richard Daubriac (UNIPD-DFA)

09:30 Defect characterization in monolithic integrated Ge-on-Si layers grown by Low-Energy Plasma-Enhanced Chemical Vapour Deposition

Speaker: Afonso de Cerdeira Oliveira (L-NESS (Politecnico di Milano))

09:50 Hyperdoped and Highly Strained Ge:Sb layers by Pulsed Laser Melting for Next-Generation Germanium Cristalline Gamma-Ray Sources

Speaker: Francesco Sgarbossa (UNIPD and INFN-LNL)

10:10 → 10:40 Coffee Break

10:40 → 12:40 Group IV for Photonics

10:40 All-silicon telecom photodetectors via ion-beam engineering for photonic integration

Silicon’s transparency in the telecommunication bands (1260–1625 nm) has traditionally required hybrid integration of materials such as germanium for photodetection, limiting scalability and CMOS compatibility [1-3]. Here, we present a strategy based on ion-beam engineering of deep-level dopants in silicon to realize all-silicon, waveguide-coupled photodetectors operating at room temperature in the telecom C band. By implanting deep-level dopants near the solid-solubility limit, sub-bandgap absorption is enhanced via defect-mediated states, while preserving electronic transport [4].
The resulting devices achieve a responsivity of 0.56 A/W, external quantum efficiency of 44.8%, a 2 GHz bandwidth, and a noise-equivalent power of 4.2×10-10 W/Hz1/2 at 1550 nm. These results demonstrate that ion implantation can create optically active defect states in silicon with practical photodetection performance, enabling monolithic integration into photonic circuits. Beyond device operation, this approach provides insight into the formation, energy levels, and transport properties of deep-level centers in silicon, highlighting the potential of ion-beam techniques for defect engineering and functionalization of silicon for advanced optoelectronic and quantum photonic applications.

[1] Shekhar, S. et al. Roadmapping the next generation of silicon photonics. Nat. Commun. 15, 751 (2024).
[2] Lischke, S. et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat. Photonics 15, 925-931 (2021).
[3] Assefa, S., Xia, F. & Vlasov, Y. A. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature 464, 80-84 (2010).
[4] Shaikh, S. M. et al. A high-performance all-silicon photodetector enabling telecom-wavelength detection at room temperature. arXiv:2412.05872 (2025).

Speaker: Yonder Berencén (Helmholtz-Zentrum Dresden Rossendorf)

11:20 SiGe Forward-Reverse linearly graded buffers for mid-infrared photonics

Speaker: Jacopo Frigerio (Politecnico Di Milano)

11:40 GeSn Waveguide Photodetectors for Next-Generation Silicon Photonics

Speaker: Guo-En Chang (National Yang Ming Chiao Tung University)

12:00 Emergent optical and transport phenomena in hyperdoped n-type Ge

Speaker: Giulia Maria Spataro (Dipartimento di Fisica e Astronomia, Università di Padova, via Marzolo 8, 35131, Padova, Italy)

12:20 Controlled surface cleaning of MACE-nanotextured Ge for cost-efficient high-performance UV-SWIR photodetection

Speaker: Mariia Terletskaia

12:40 → 13:40 Lunch

13:40 → 15:40 Alternative Semiconductor Devices

13:40 QSOI®: a platform for large scale quantum integrated circuits

Spin qubits implemented in silicon quantum dots (QDs) are among the most promising candidates for large-scale quantum computing due to their compatibility with CMOS technology and their strong potential for monolithic co-integration with control and readout electronics [1]–[3]. In this context, fully depleted silicon-on-insulator (FDSOI) technology offers unique advantages for quantum–classical integration. Its intrinsic electrostatic control, reduced variability, and the availability of a global back gate enable dynamic tuning of device characteristics [4], providing a powerful knob to optimize both performance and power consumption at cryogenic temperatures [5, 6]. In this work, we present our results on the quantum silicon-on-insulator (QSOI®) technology, inspired by the commercial 28 nm FDSOI process, and modified to address the specific requirements of spin qubit fabrication within a CMOS-compatible platform. Leveraging the industrial maturity of a commercial foundry process, we designed, fabricated and tested both quantum and classical devices on the same wafer. We will focus on the performance of the devices, with two objectives in mind: on the one hand, the development of a cryogenic Process Design Kit (PDK) suitable for quantum integrated circuit design. On the other hand, achieving the quantum regimes in arrays of quantum dots. This work demonstrates that advanced FDSOI technology has the potential to support both high-quality silicon spin qubits and cryogenic CMOS electronics on the same Wafer, establishing a scalable and manufacturable path toward large-scale quantum processors within a standard CMOS ecosystem.

Speaker: Bruna Cardoso Paz (Quobly)

14:20 Cryogenic SiGe Transistors based on Modulation Acceptor Doping

Speaker: Dr Masiar Sistani (Institute of Solid State Electronics, TU Wien)

14:40 Non-volatile reconfigurable Al-Si transistors via ferroelectrically modulated Schottky barriers

Speaker: Daniele Nazzari (TU Wien)

15:00 Hydrogen migration in ALD-grown dielectrics for silicon surface passivation

Speaker: Sophie Pain (University of Birmingham)

15:20 Engineering Ultrasmooth Sub-Nanometer Interlayers via Chemical Modulation for Suppression of Interface Defects in Advanced Si/HfO2 MOS Technology

Speaker: Mr Yu-Chen Chang (Institute of Semiconductor Electronics, RWTH Aachen University, 52074 Aachen, Germany)

15:40 → 16:10 Coffee Break

16:10 → 18:10 Defects for Advanced Semiconductor Applications

16:10 Engineering Defects for Quantum Technology

Point defects in solids, have emerged as powerful resources for quantum technology. In this talk, I will discuss how atomic-scale defects can be engineered, controlled, and integrated to realize robust platforms for quantum sensing, communication, and computation. Using color centers in diamond—most prominently the nitrogen-vacancy (NV) center—as a guiding example, I will outline the principles that enable optical initialization, coherent spin manipulation, and high-fidelity readout at room temperature.
A central theme will be the transition from studying naturally occurring defects to the deterministic creation of tailored quantum systems. Ion implantation, advanced growth techniques, and nanoscale fabrication now allow us to position single defects with nanometer precision and engineer their electromagnetic and strain environments. These capabilities enable enhanced coherence times, improved photon collection efficiencies, and scalable device architectures.
I will further discuss hybrid quantum systems, where engineered defects are coupled to photonic resonators, mechanical structures, and microwave circuits. Such interfaces open pathways toward quantum networks and distributed sensing schemes. Particular emphasis will be placed on nanoscale nuclear magnetic resonance and magnetic imaging, where single defects operate as quantum sensors with unprecedented spatial resolution and sensitivity.
Finally, I will address future challenges: materials optimization, defect-to-defect variability, and the integration of defect-based qubits into complex quantum devices. By transforming defects into designed quantum functionalities, we move from observing imperfections to engineering quantum matter for practical technologies.

Speaker: Prof. Jörg Wrachtrup (University of Stuttgart and Max Planck Institute for Solid State Research, Germany)

16:50 Modulation of the intra-axis Delta z valley splitting in Si via strain gradients for electron spin qbits

Speaker: Dr Felipe Murphy-Armando (Tyndall National Institute, University College Cork, Ireland)

17:10 Beyond Bulk: Interface-Driven Dopant Physics in Ultrathin Silicon-on-Insulator

Speaker: Andrea Pulici (CNR-IMM, Unit of Agrate Brianza)

17:30 W-Center Defects in Crystalline Silicon: Electronic Structure and Optical Signatures

Speaker: kaynat alvi (Tyndall National Institute, Munster Technological University, Cork, Ireland)

17:50 Low Temperature Epitaxy of Planar Hexagonal Germanium

Speaker: Mr Andrea Besana (LNESS-Politecnico di Milano)

18:10 → 19:00 Industrial session

19:00 → 22:00 Poster Session - 1

19:00 Admittance spectroscopy of organic-silicon heterojunction structures fabricated with ultrasound assistance

Speaker: Prof. Oleg Olikh (Taras Shevchenko National University of Kyiv)

19:00 Comparative study of void defect annihilation in Si (100) and Si (110) wafers during high-temperature rapid thermal processing

Speaker: Mr Takuya Kusunoki (Graduate School of Computer Science and Systems Engineering, Okayama Prefectural University, Technology Group, Technology Department, GlobalWafers Japan Co., Ltd)

19:00 Controlled Copper Precipitation for Rapid Point Defect Characterization in Near-Perfect Czochralski Silicon

Speaker: Shuai Yuan (Zhejiang University)

19:00 DFT Analysis of Gettering in Si Wafers for CMOS Image Sensors

Speaker: Dr Iori Takeda (Okayama Prefectural University)

19:00 Doping Engineering of Double-SOI Structures for Two-Channel Tunneling Transistors

Speaker: Dr Shengqiang Zhou (Helmholtz-Zentrum Dresden-Rossendorf)

19:00 Electric Field Distribution in Black Silicon Needles Under Reverse Bias: A TCAD Simulation Study

Speaker: Oskari Leiviskä (Aalto University)

19:00 Electrical and Optical Properties of Defect-Enhanced SiGe Heterostructures

Speaker: kaynat alvi (Tyndall National Institute, Munster Technological University, Cork, Ireland)

19:00 Electrical Properties of Dislocation-Related Defects in Ge/Si Virtual Substrates

Speaker: Henriette Tetzner

19:00 Electrically detected magnetic resonance of telecom-wavelength G and C centers in silicon

Speaker: Alessandro Puddu (Helmholtz-Zentrum Dresden-Rossendorf / Technische Universität Dresden)

19:00 Elimination of slip lines induced by the pins in rapid thermal processing for Czochralski silicon wafers

Speaker: Yilun Wang (Zhejiang University)

19:00 Elusive point radiation defects in proton-irradiated silicon and germanium

Speaker: Dr Nikolay Arutyunov

19:00 Engineering Nanostructured Electrodes on Screen-Printed Carbon for Real-Time Monitoring of Nitrogen-Based Water Pollutants

Speaker: Dr Roberta Farina (CNR IMM sede principale)

19:00 Epi stacking fault defects in highly doped phosphorus 300 mm crystals

Speaker: Matteo Pannocchia (MEMC GlobalWafers)

19:00 Evaluation of impurity effects in magic-angle twisted bilayer graphene by machine learning interatomic potentials

Speaker: Ignazio Vacante (CNR-IMM)

19:00 Experimental and simulated investigation of nitrogen shallow donors in Czochralski silicon wafers doped with nitrogen

Speaker: Dr Dawid Kot

19:00 Experimental observation and analysis of gliding I3 basal stacking faults in hexagonal germanium

Speaker: Mette Schouten (Eindhoven University of Technology)

19:00 Ge-on-Si Substrates with Porous Silicon buffer as Compliant Layer

Speaker: Dr Charlotte Weiss (Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstraße 2, 79110 Freiburg, Germany)

19:00 Impact of Substrate Carbon Impurities on MOSFET Breakdown Voltage via Enhanced Phosphorus Out-Diffusion in n/n⁺ Epitaxial Wafers

Speaker: Jinge Wang

19:00 Infrared properties of a perfectly compensated germanium doped with shallow donors and acceptors below the Mott transition

Speaker: Dr Sergey Pavlov (German Aerospace Center)

19:00 Mechanism of slip line propagation in advanced 300mm silicon substrates

Speaker: Dr Alexandra Abbadie (STMicroelectronics)

19:00 On the formation of local molten regions on Si surfaces by pulsed laser annealing at the melting threshold

Speaker: Dr SEBASTIEN KERDILES (Université Grenoble-Alpes, CEA-LETI, France)

19:00 On the gettering properties of isovalent tin and lead impurities in n-type Czochralski silicon

Speaker: Dr Mykola Kras’ko (Institute of Physics of the NAS of Ukraine)

19:00 Optically detected spin properties of the telecom L-band C center in silicon

Speaker: Shuyu Wen (Helmholtz-Zentrum Dresden-Rossendorf)

19:00 Origin of optically active Er3+ sites in Silicon on Insulator-based photonic waveguides

Speaker: Yanan Xu

19:00 Progress in understanding optically detected magnetic resonance (ODMR) spectra of ASi-Sii-defects

Speaker: Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik)

19:00 Pulsed Laser Melting for TOPCon technology: new routes to higher efficiency

Speaker: Francesco Sgarbossa (Dfa unipd)

19:00 Radiation-induced defect reactions in Silicon Junction Barrier Schottky Diodes upon irradiation with alpha particles in different regimes

Speaker: Dr Vladimir Markevich (The University of Manchester)

19:00 Search for stable atomic configurations in SiGe, SiSn, and GeSn alloys using DFT and optimization algorithms

Speaker: Koji Sueoka

19:00 Structure loss during the Czochralski silicon process: causes, remedies and ML aid

Speaker: Marisa Di Sabatino (NTNU)

19:00 Superacid-based diagnosis of damage in high-carrier-lifetime crystalline silicon

Speaker: Sophie Pain (University of Birmingham)

19:00 Surface passivation of silicon by ZnO/Al2O3 stacks with controlled SiOx interlayers

Speaker: John Murphy (University of Birmingham)

19:00 Theoretical study on the stability of Sn atom in Ge thin film grown on GaSb substrates

Speaker: Dr Koji Ozawa (Graduate School of Computer Science and Systems Engineering, Okayama Prefectural University)

19:00 Unlocking high throughput material discovery on defective interfaces

Speaker: Dr Artem Musiienko (Helmholtz Zentrum Berlin)

Tuesday 29 September

08:30 → 10:10 Silicon Carbide

08:30 Defects identification, testing and screening for reliable SiC devices

09:10 SiC color centers for quantum sensing: an Electro-Luminescence based approach for their investigation

Speaker: Dr Giorgio Migliore (CNR-IMM & UNICT-DFA)

09:30 Benchmarking single Er3+ coherence in Silicon Carbide on Insulator-based micropillars

Speaker: Alexey Lyasota (Centre for Quantum Computation and Communication Technology (CQC2T), School of Physics, The University of New South Wales, Sydney NSW 2052, Australia)

09:50 Exploring erbium quantum emission in CMOS compatible hexagonal Silicon Carbide on Insulator photonics

Speaker: Prof. Stefania Castelletto (RMIT)

10:10 → 10:40 Coffee Break

10:40 → 12:40 Silicon, germanium and their alloys I

10:40 Gate-defined quantum circuits in silicon-germanium heterostructures

Speaker: Dominique Bougeard

11:20 UV-nanosecond laser hyperdoping of Ge/Si and SiGe/Si epilayers

Speaker: Benedetta Scandolara (University of Padua, Department of Physics and Astronomy “Galileo Galilei”)

11:40 Crystallization of Sn-rich Si and Ge thin films by flash lamp annealing

Speaker: Lars Rebohle

12:00 Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys.

Speaker: Enrico Di Russo (Università di Padova)

12:20 Positron trapping in highly p-type Ge

Speaker: Pejk Amoroso (University of Helsinki)

12:40 → 13:40 Lunch

13:40 → 15:40 GeSn Special Session - LASTSTEP Project

13:40 GeSn Semiconductors: A Tale of Defects and Devices

Speaker: Oussama Moutanabbir (École Polytechnique de Montréal)

14:20 Material and Design Trade-offs in GeSn-Based MQW Lasers on Silicon

Speaker: Dan Buca (Forschungszentrum Juelich)

14:40 Room-Temperature Optical Gain Analysis in Biaxially Strained Bulk GeSn for Mid-Infrared Silicon Photonics

Speaker: Zoran Ikonic (University of Leeds)

15:00 MBE Growth of Sn/Ge MQW Structures

Speaker: Michael Oehme

15:20 Germanium tin on insulator, a suitable platform for electrically driven Mid-IR emitters and detectors

Speakers: Mr Antonin Macquart (C2N, UPSaclay), Moustapha EL Kurdi (LTCI, Telecom Paris, Institut Polytechnique de Paris)

15:40 → 16:10 Coffee Break

16:10 → 18:10 GeSn Special Session - LASTSTEP Project

16:10 SiGeSn Technology for Monolithic Infrared Silicon Photonics

Speaker: Wei Du (University of Arkansas)

16:50 Improving the performance of GeSn infrared photodetectors on Si through nanoscale engineering

Speaker: Simone Assali (Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France)

17:10 Influence of Electrode Geometry and Thermal Annealing on the Electroluminescence of GeSn LEDs

Speaker: Paul Goulain (CEA-IRIG, CEA-LETI)

17:30 High Sn content GeSn-based Avalanche PhotoDiode for Medium InfraRed detection

Speaker: Lorenzo Finazzi (POLIMI)

17:50 Operando study of device heating using full-field x-ray diffraction microscopy

Speaker: Giovanni Capellini

19:00 → 22:00 Poster Session - 2

19:00 Ab Initio Modeling of Surface-Induced Effects on Quantum Gate Fidelity in 3C-SiC Divacancy Qubits

Speaker: Dr Ioannis Deretzis (Consiglio Nazionale delle Ricerche- Istituto per la Microelettronica e Microsistemi)

19:00 Atomic structures and stability of large-sized vacancy clusters and finite-size extended interstitial defects in silicon: A neural-network potential and first-principles study

Speaker: Prof. Koji Sueoka (Okayama Prefectural University)

19:00 Atomic-scale mechanism of step-edge-induced stacking fault evolution during HVPE growth of (100) β-Ga2O3

Speaker: Haohan Ye (Zhejiang University)

19:00 Atomic-scale microscopy insights into order and disorder phenomena in AlxGa1-xN

Speaker: Enrico Di Russo (Università di Padova)

19:00 Deep Level Defects in β-Ga2O3: Insights from Hydrogenation and Oxygen Annealing Studies

Speaker: Vladimir Kolkovsky

19:00 Defect Engineering and Passivation at Halide Perovskite and Kesterite Nanoparticles Interface: A Combined Experimental and DFT Study

Speaker: Vanira Trifiletti (University of Milano-Bicocca)

19:00 Defect studies and down conversion strategies of double-cation mixed perovskite solar cells

Speaker: Corrado Del Conte (Department of Physics and Astronomy – Alma Mater Studiorum University of Bologna, Viale Berti-Pichat 6/2, Bologna 40127, Italy)

19:00 Defect Suppression in Boron-Doped MW-PECVD-Grown (113)-Oriented Diamond Substrates for Vertical Power Schottky Diodes

Speaker: Pavel Hazdra (Czech Technical University in Prague, Dept. Microelectronics)

19:00 Detection of nuclei for oxidation induced stacking faults

Speaker: Kaisla Sutinen (Aalto University, Department of Electronics and Nanoengineering)

19:00 Elaboration of 200 mm GeSnOI via Bonded Etch-Back SOI process

Speaker: Mr Jeremie Chretien (CEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, France)

19:00 Estimating recombination-active defect concentrations in silicon n+–p–p+ structures via transfer learning from computer vision models

Speaker: Prof. Oleg Olikh (Taras Shevchenko National University of Kyiv)

19:00 Identification of the dominant trap states in mixed halide perovskite pellets

Speaker: Mahsa Masoud (Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy and Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin, Italy)

19:00 Impact of Ionic Defects on Mesoporous Perovskite Solar Cells and X-Ray Detectors

Speaker: Gaetano Calogero (CNR-IMM, Catania, Italy)

19:00 Lithium-free segmentable hyperpure germanium detector via Pulsed Laser Melting

Speaker: Francesco Sgarbossa (Dfa unipd)

19:00 Magnetron-Sputtered HfO2 Thin Films for Microelectronic and Sensor Applications

Speaker: Dr Vl. Kolkovsky

19:00 Monolithic GeSn Photodetectors Integrated on Silicon for Mid-Infrared Applications

Speaker: Vincent Reboud (CEA LETI)

19:00 Multiparametric Control of MAPbI₃ Growth via Low-Vacuum Proximity-Space Effusion

Speaker: Dr Valentina Arena (CNR-IMM)

19:00 Non-destructive light scattering-based bulk micro defect detection in silicon wafers

Speaker: Tamás Szarvas

19:00 Novel method to measure the temperature-dependent minority carrier lifetime of crystalline silicon wafers for solar cell applications

Speaker: Marisa Di Sabatino (NTNU)

19:00 Optical Characterisation of Colour Centres in Nitride Layers

Speaker: Ms Amy Albrecht (Technische Universität Bergakademie Freiberg)

19:00 Origin and evolution of basal dislocations in HVPE grown GaN

Speaker: Dr Ulrich Bläß (Fraunhofer Institute for Integrated Systems and Device Technology, IISB)

19:00 Oxygen diffusion in Aluminium-Nitride

Speakers: Bracht, Tröger-Neuhaus

19:00 Photo electrical characterization of the interface states in dielectric/AlGaN/GaN structures

Speaker: Gabriele Seguini (CNR-IMM, Unit of Agrate Brianza)

19:00 Photo-elastic Characterization of InP Wafers

Speaker: Martin Herms (PVA Metrology & Plasma Solutions GmbH)

19:00 Photoluminescence spectroscopy study on hydride vapour phase epitaxy grown GaN:Mn using metal-organic precursor doping approach

Speaker: Kuei-Shen Hsu (Technische Universität Bergakademie Freiberg, Institute of Applied Physics)

19:00 Response Surface Modelling for a Vertical GaN HVPE Reactor within a Constrained Design Space

Speaker: Dr Jiri Tomkovic (Institute of Applied Physics, TU Bergakademie Freiberg)

19:00 Strain-controlled directness and confinement margins in CGeSn/(Si)GeSn MQW emitters on (001) Ge/Si

Speaker: Walid Belaid (School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom)

19:00 Study of Defect Physics in Zirconia MIM Capacitors

Speaker: Nishant Saini

19:00 Synthesis of artificial graphene in the AlGaN/GaN heterostructure through block copolymer self-assembly

Speaker: Anita Patelli (Università del Piemonte Orientale)

19:00 Synthesis of supersaturated GeSn alloys on Ge and Ge-on-Si by sputter deposition and nanosecond pulsed laser melting

Speaker: Enrico Di Russo (Università di Padova)

19:00 Towards Scalable Flexible Kesterite-based solar cells: Addressing Bulk and Interface Defects through Drop-on-Demand Inkjet Printing

Speaker: Prof. Simona Binetti (Università degli Studi di Milano-Bicocca)

Wednesday 30 September

08:30 → 10:30 Nitride Semiconductors

08:30 Controlling formation of single photon emitting colour centres in MOVPE of gallium nitride

Point defects in gallium nitride (GaN) have recently emerged as a promising platform for room-temperature single-photon generation, exhibiting high emission rates and robust optical properties. GaN also benefits from well-established fabrication processes due to its widespread use in applications such as solid-state lighting and high power and high frequency electronics. Whilst wafers of bulk GaN are increasingly widely available, the material is still most commonly grown heteroepitaxially, and the use of silicon substrates allows for production of up to 300 mm diameter wafers. Meanwhile, GaN single photon emitters offer linearly polarized emission, Debye–Waller factors of approximately 50%, and the possibility of microwave control of optically addressable spin states. Overall, the combination of a relatively mature materials system and promising single photon emitter properties offer real potential for the development of scalable quantum technologies based on GaN.
However, the nature of the single photon emitting defects in GaN is unknown, and it has proved difficult to control their density or location. Early studies suggested that the emitters might consist of a point defect residing inside or next to a stacking fault (SF) [1], but attempts to engineer structures with deliberately included SFs to promote emitter formation met with little success [2]. For nitrides grown on sapphire, evidence has accumulated that the majority of emitters form close to the nitride/sapphire interface [3]. This location does not facilitate the fabrication of devices containing emitters, since it renders it difficult to position doped layers or elements of optical cavities below the emitter in the epitaxial stack.
However, the insight that emitters may form in the highly defective region at the GaN/sapphire interface has inspired efforts to try and reproduce the relevant growth conditions at a more convenient location: part way through the epitaxial stack in GaN-on-silicon material [4]. Following growth of Al(Ga)N layers required to control strain in GaN-on-silicon, and the growth of an initial GaN buffer, the GaN surface was treated with silane (SiH4) and ammonia (NH3) for 720 s to form a thin layer of SiNx like that created during the initial nitridation step in GaN/sapphire growth. Thereafter a thin GaN layer was deposited at low temperature, and the sample was then annealed in ammonia at 1020 °C. This process resulted in the formation of a disordered array of GaN islands, the locations of which correlated with the locations of quantum emitters. A similar sample was capped with a further 3 µm of GaN, to increase the stability of quantum light emission by preventing reactions with air and surface charges. The capped structures contained defects which demonstrated bright single photon emission at room temperature, but which could be removed by etching away just over 3 µm of GaN, demonstrating that the emitters had formed at the intended depth. This is an important step towards control of quantum emitter locations in GaN-on-silicon.

[1] A.M. Berhane et al. Adv. Mater. 2017 29 1605092.
[2] M. Nguyen et al. APL Mater. 2019 7 081106.
[3] H.B.Yağcı, et al. Optical Materials 2024 156 115967.
[4] K.M.Eggleton et al. APL Photonics 2026 11 016103.

Speaker: Rachel Oliver (University of Cambridge)

09:10 Photo-induced emission hopping of bright and regularly occurring native quantum emitters in AlN grown by molecular beam epitaxy

Speaker: Sébastien Pezzagna

09:30 Non-destructive visualization of the threading dislocation content in PVT-grown bulk AlN on wafer scale

Speaker: Leon Schiller (Fraunhofer IISB)

09:50 Plasma enhanced Atomic Layer Etching on Nitrides and SiC for high power and photonic application

Speaker: Dr Franziska C. Beyer (deutsch)

10:30 → 11:00 Coffee Break

11:00 → 19:00 Excursion - Cultural tour of the Venetian Lagoon

19:00 → 22:00 Conference Dinner

Thursday 1 October

08:30 → 10:10 Peroskites and their applications

08:30 Metal-Halide Perovskites and Their “Magic” Defects

Speaker: Ivan Scheblykin (Chemical Physics and NanoLund, Lund University, Sweden)

09:10 Unravel the contribution of Bulk and Surface States in 2D-layered Perovskite by means of Photocurrent Spectroscopies

Speaker: Andrea Ciavatti (Department of Physics and Astronomy - University of Bologna)

09:30 Atomistic Engineering of Nucleation and Defect-Mediated Phase Stability in MAPI Perovskites: An AI-Driven Computational Framework

Speaker: Giuseppe Fisicaro (CNR Istituto per la Microelettronica e Microsistemi)

09:50 Evaluating Structural Stability and Optoelectronic Properties of Lead-Free Metal Halide Perovskite Thin Films

Speaker: Vanira Trifiletti (University of Milano-Bicocca)

10:10 → 10:40 Coffee Break

10:40 → 12:40 Silicon, germanium and their alloys II

10:40 A theoretical perspective of defects in silicon and germanium: From nanoelectronics to quantum computing

11:20 Diffusion of p-type dopants in Germanium

Speakers: Bracht, Sinz

11:40 Shallow junction formation in silicon by laser annealing of phosphorus end-terminated polymers

Speaker: Gaetano Calogero (CNR-IMM)

12:00 Modulation Acceptor Doping of Silicon: Induced defects in SiO2 for hole generation in impurity-free Si

Speaker: Daniel Hiller (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)

12:20 Beyond the Statistical Indeterminism of Ion Implantation: Toward Deterministic Nanoscale Doping and Defect Engineering

Speaker: Giuseppe D'Arrigo (CNR-IMM)

12:40 → 13:40 Lunch

13:40 → 15:40 Low dimensional Semiconductors

13:40 Dopant atom engineering quantum dot single-electron transistors and memory in silicon

Speaker: Prof. Zahid Durrani (Imperial College London)

14:20 Tuning Kondo effect via two-dimensional confinement in highly doped silicon-on-insulator

Speaker: Gabriele Seguini (CNR-IMM Agrate Brianza)

14:40 Engineering 1DEG system in pure silicon

Speaker: Teimuraz Mtchedlidze (Mchedlidze) (Institute of Applied Physics, Technische Universität Bergakademie, 09599 Freiberg, Germany)

15:00 Exploring quantum effects and structural interplays in graphene-derived functional materials for sensing and beyond

Speaker: Damiano Ricciarelli (CNR-IMM)

15:20 Sputter deposition and pulsed laser crystallisation of MoS2 films

Speaker: Daniele Demeneghi (Università degli Studi di Padova)

15:40 → 16:10 Coffee Break

16:10 → 18:10 Advanced Characterization techniques

16:10 Laboratory Photoluminescence imaging apparatus for identifying crystallographic defects in silicon

Speaker: Isabella Mica (STMicroelectronics)

16:50 A charge decoupling method to infer bulk recombination in high quality silicon wafers

Speaker: Nicholas Grant (University of Warwick)

17:10 Beyond Conventional DLTS: Direct Observation of Isotope Shifts in Deep-Level Emission Using Laplace DLTS

Speaker: Vladimir Kolkovsky

17:30 Defect Profiling in AlInGaP Alloys via MOS Impedance Spectroscopy

Speaker: Paolo La Torraca (Tyndall National Institute)

17:50 3D chemical mapping of dopant distribution in epitaxially grown heavily doped Si:P and SiGe:B using atom probe tomography

Speaker: Maryna Dryhailo (CEA-Leti & SIMaP, Grenoble INP)

19:00 → 22:00 Dinner

Friday 2 October

08:30 → 10:30 Silcon for Photovoltaics and Microelectronics

08:30 Photoexcited muon spin spectroscopy for studying bulk, surface, and temperature-dependent carrier recombination in silicon wafers and solar cells

Speaker: John Murphy (University of Birmingham)

08:50 Investigation of Pinholes Opening in Silicon Solar Cell Passivated Contacts Induced by Pulsed Laser Annealing

Speaker: Gianmarco Puggioni (Università di Padova)

09:10 Impact of metallic contamination and gettering in bipolar technologies

Speaker: Dr Alexandra Abbadie (STMicroelectronics)

09:30 Agglomeration of Ni(Pt)Si thin films: redistribution of Pt

Speaker: Dr Dominique Mangelinck (IM2NP-CNRS-AMU)

09:50 Diffusion and gettering mechanism of critical metals in 300mm silicon substrates

Speaker: Oceane Fevrier

10:10 TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing

Speaker: Antonio Massimiliano Mio (Institute for Microelectronics and Microsystems, National Research Council (CNR-IMM), Strada VIII, 5, 95121, Catania, Italy)

10:30 → 11:00 Coffee Break

11:00 → 12:00 Announcements, YRA and YSA, Closing Remarks

12:00 → 13:00 Lunch