GADEST 2026

Name: GADEST 2026
Start: 2026-09-27T13:00:00+02:00
End: 2026-10-02T13:30:00+02:00
Location: GADEST 2026 - San Servolo Island, Venice (Italy)

27 September 2026 to 2 October 2026

GADEST 2026 - San Servolo Island, Venice (Italy)

Europe/Rome timezone

Speaker List

Alexandra Abbadie
- Speaker at Impact of metallic contamination and gettering in bipolar technologies
- Speaker at Mechanism of slip line propagation in advanced 300mm silicon substrates
Amy Albrecht (Technische Universität Bergakademie Freiberg)
- Speaker at Optical Characterisation of Colour Centres in Nitride Layers
kaynat alvi (Tyndall National Institute, Munster Technological University, Cork, Ireland)
- Speaker at Electrical and Optical Properties of Defect-Enhanced SiGe Heterostructures
- Speaker at W-Center Defects in Crystalline Silicon: Electronic Structure and Optical Signatures
Pejk Amoroso (University of Helsinki)
- Speaker at Positron trapping in highly p-type Ge
Valentina Arena (CNR-IMM)
- Speaker at Multiparametric Control of MAPbI₃ Growth via Low-Vacuum Proximity-Space Effusion
Nikolay Arutyunov
- Speaker at Elusive point radiation defects in proton-irradiated silicon and germanium
Simone Assali (Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France)
- Speaker at Improving the performance of GeSn infrared photodetectors on Si through nanoscale engineering
walid belaid (School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom)
- Speaker at Strain-controlled directness and confinement margins in CGeSn/(Si)GeSn MQW emitters on (001) Ge/Si
Yonder Berencén (Helmholtz-Zentrum Dresden Rossendorf)
- Speaker at All-silicon telecom photodetectors via ion-beam engineering for photonic integration
Andrea Besana (Politecnico di Milano)
- Speaker at Low Temperature Epitaxy of Planar Hexagonal Germanium
Franziska C. Beyer (deutsch)
- Speaker at Plasma enhanced Atomic Layer Etching on Nitrides and SiC for high power and photonic application
Simona Binetti (University of Milano-Bicocca, Italy)
- Speaker at Towards Scalable Flexible Kesterite-based solar cells: Addressing Bulk and Interface Defects through Drop-on-Demand Inkjet Printing
Lachlan Black (Australian National University)
- Speaker at Defect mitigation strategies for next-generation, high-efficiency silicon-based solar cells
Ulrich Bläß
- Speaker at Origin and evolution of basal dislocations in HVPE grown GaN
Dominique Bougeard
- Speaker at Gate-defined quantum circuits in silicon-germanium heterostructures
Bracht
- Speaker at Oxygen diffusion in Aluminium-Nitride
Bracht
- Speaker at Diffusion of p-type dopants in Germanium
Dan Buca (Forschungszentrum Juelich)
- Speaker at Material and Design Trade-offs in GeSn-Based MQW Lasers on Silicon
Gaetano Calogero (CNR-IMM)
- Speaker at Impact of Ionic Defects on Mesoporous Perovskite Solar Cells and X-Ray Detectors
- Speaker at Shallow junction formation in silicon by laser annealing of phosphorus end-terminated polymers
Giovanni Capellini
- Speaker at Operando study of device heating using full-field x-ray diffraction microscopy
Bruna Cardoso Paz (Quobly)
- Speaker at QSOI®: a platform for large scale quantum integrated circuits
stefania castelletto
- Speaker at Exploring erbium quantum emission in CMOS compatible hexagonal Silicon Carbide on Insulator photonics
Yu-Chen Chang (RWTH Aachen University)
- Speaker at Engineering Ultrasmooth Sub-Nanometer Interlayers via Chemical Modulation for Suppression of Interface Defects in Advanced Si/HfO2 MOS Technology
Guo-En Chang (National Yang Ming Chiao Tung University)
- Speaker at GeSn Waveguide Photodetectors for Next-Generation Silicon Photonics
Francesca Chiodi (C2N, Université Paris Saclay)
- Speaker at Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping
Jérémie Chrétien (CEA LETI)
- Speaker at Elaboration of 200 mm GeSnOI via Bonded Etch-Back SOI process
Andrea Ciavatti (Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy)
- Speaker at Unravel the contribution of Bulk and Surface States in 2D-layered Perovskite by means of Photocurrent Spectroscopies
Giuseppe D'Arrigo (CNR-IMM)
- Speaker at Beyond the Statistical Indeterminism of Ion Implantation: Toward Deterministic Nanoscale Doping and Defect Engineering
Richard Daubriac (UNIPD, Padua (Italy))
- Speaker at Combination of layer deposition and pulsed UV laser annealing for thin GeSn:Sb layers hyperdoping
Afonso de Cerdeira Oliveira (L-NESS (Politecnico di Milano))
- Speaker at Defect characterization in monolithic integrated Ge-on-Si layers grown by Low-Energy Plasma-Enhanced Chemical Vapour Deposition
Corrado Del Conte (Department of Physics and Astronomy – Alma Mater Studiorum University of Bologna)
- Speaker at Defect studies and down conversion strategies of double-cation mixed perovskite solar cells
Daniele Demeneghi (Università degli Studi di Padova)
- Speaker at Sputter deposition and pulsed laser crystallisation of MoS2 films
Ioannis Deretzis (Consiglio Nazionale delle Ricerche- Istituto per la Microelettronica e Microsistemi)
- Speaker at Ab Initio Modeling of Surface-Induced Effects on Quantum Gate Fidelity in 3C-SiC Divacancy Qubits
Enrico Di Russo (Università di Padova)
- Speaker at Atomic-scale microscopy insights into order and disorder phenomena in AlxGa1-xN
- Speaker at Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys.
- Speaker at Synthesis of supersaturated GeSn alloys on Ge and Ge-on-Si by sputter deposition and nanosecond pulsed laser melting
Marisa Di Sabatino (NTNU)
- Speaker at Novel method to measure the temperature-dependent minority carrier lifetime of crystalline silicon wafers for solar cell applications
- Speaker at Structure loss during the Czochralski silicon process: causes, remedies and ML aid
Maryna Dryhailo (CEA-Leti & SIMaP, Grenoble INP)
- Speaker at 3D chemical mapping of dopant distribution in epitaxially grown heavily doped Si:P and SiGe:B using atom probe tomography
Wei Du (University of Arkansas)
- Speaker at SiGeSn Technology for Monolithic Infrared Silicon Photonics
Zahid Durrani (Imperial College London)
- Speaker at Dopant atom engineering quantum dot single-electron transistors and memory in silicon
Moustapha EL Kurdi (LTCI, Telecom Paris, Institut Polytechnique de Paris)
- Speaker at Germanium tin on insulator, a suitable platform for electrically driven Mid-IR emitters and detectors
Roberta Farina (CNR IMM sede principale)
- Speaker at Engineering Nanostructured Electrodes on Screen-Printed Carbon for Real-Time Monitoring of Nitrogen-Based Water Pollutants
Oceane Fevrier
- Speaker at Diffusion and gettering mechanism of critical metals in 300mm silicon substrates
Lorenzo Finazzi (POLIMI)
- Speaker at High Sn content GeSn-based Avalanche PhotoDiode for Medium InfraRed detection
Giuseppe Fisicaro (CNR-IMM)
- Speaker at Atomistic Engineering of Nucleation and Defect-Mediated Phase Stability in MAPI Perovskites: An AI-Driven Computational Framework
Jacopo Frigerio (Politecnico di Milano)
- Speaker at SiGe Forward-Reverse linearly graded buffers for mid-infrared photonics
Paul Goulain (CEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, France)
- Speaker at Influence of Electrode Geometry and Thermal Annealing on the Electroluminescence of GeSn LEDs
Nicholas Grant (University of Warwick)
- Speaker at A charge decoupling method to infer bulk recombination in high quality silicon wafers
Pavel Hazdra (Czech Technical University in Prague, Dept. Microelectronics)
- Speaker at Defect Suppression in Boron-Doped MW-PECVD-Grown (113)-Oriented Diamond Substrates for Vertical Power Schottky Diodes
Martin Herms (PVA Metrology & Plasma Solutions GmbH)
- Speaker at Photo-elastic Characterization of InP Wafers
Daniel Hiller (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)
- Speaker at Modulation Acceptor Doping of Silicon: Induced defects in SiO2 for hole generation in impurity-free Si
Kuei-Shen Hsu (Technische Universität Bergakademie Freiberg, Institute of Applied Physics)
- Speaker at Photoluminescence spectroscopy study on hydride vapour phase epitaxy grown GaN:Mn using metal-organic precursor doping approach
Zoran Ikonić (School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom)
- Speaker at Room-Temperature Optical Gain Analysis in Biaxially Strained Bulk GeSn for Mid-Infrared Silicon Photonics
SEBASTIEN KERDILES (Université Grenoble-Alpes, CEA-LETI, France)
- Speaker at On the formation of local molten regions on Si surfaces by pulsed laser annealing at the melting threshold
Vladimir Kolkovsky
- Speaker at Beyond Conventional DLTS: Direct Observation of Isotope Shifts in Deep-Level Emission Using Laplace DLTS
- Speaker at Deep Level Defects in β-Ga2O3: Insights from Hydrogenation and Oxygen Annealing Studies
Dawid Kot
- Speaker at Experimental and simulated investigation of nitrogen shallow donors in Czochralski silicon wafers doped with nitrogen
Mykola Kras’ko (Institute of Physics of the NAS of Ukraine)
- Speaker at On the gettering properties of isovalent tin and lead impurities in n-type Czochralski silicon
Takuya Kusunoki (GlobalWafers Japan Co., Ltd.)
- Speaker at Comparative study of void defect annihilation in Si (100) and Si (110) wafers during high-temperature rapid thermal processing
Paolo La Torraca (Tyndall National Institute)
- Speaker at Defect Profiling in AlInGaP Alloys via MOS Impedance Spectroscopy
Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik)
- Speaker at Progress in understanding optically detected magnetic resonance (ODMR) spectra of ASi-Sii-defects
Oskari Leiviskä (Aalto University)
- Speaker at Electric Field Distribution in Black Silicon Needles Under Reverse Bias: A TCAD Simulation Study
Alexey Lyasota (Centre for Quantum Computation and Communication Technology (CQC2T), School of Physics, The University of New South Wales, Sydney NSW 2052, Australia)
- Speaker at Benchmarking single Er3+ coherence in Silicon Carbide on Insulator-based micropillars
Antonin Macquart (C2N, UPSaclay)
- Speaker at Germanium tin on insulator, a suitable platform for electrically driven Mid-IR emitters and detectors
Dominique Mangelinck (IM2NP-CNRS-AMU)
- Speaker at Agglomeration of Ni(Pt)Si thin films: redistribution of Pt
Vladimir Markevich (The University of Manchester)
- Speaker at Radiation-induced defect reactions in Silicon Junction Barrier Schottky Diodes upon irradiation with alpha particles in different regimes
Mahsa Masoud (Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy)
- Speaker at Identification of the dominant trap states in mixed halide perovskite pellets
Isabella Mica (STMicroelectronics)
- Speaker at Laboratory Photoluminescence imaging apparatus for identifying crystallographic defects in silicon
Giorgio Migliore (CNR-IMM & UNICT-DFA)
- Speaker at SiC color centers for quantum sensing: an Electro-Luminescence based approach for their investigation
Antonio Massimiliano Mio (CNR-IMM Catania)
- Speaker at TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing
Oussama Moutanabbir (École Polytechnique de Montréal)
- Speaker at GeSn Semiconductors: A Tale of Defects and Devices
Teimuraz Mtchedlidze (Mchedlidze) (Institute of Applied Physics, Technische Universität Bergakademie, 09599 Freiberg, Germany)
- Speaker at Engineering 1DEG system in pure silicon
John Murphy (University of Birmingham)
- Speaker at Photoexcited muon spin spectroscopy for studying bulk, surface, and temperature-dependent carrier recombination in silicon wafers and solar cells
- Speaker at Surface passivation of silicon by ZnO/Al2O3 stacks with controlled SiOx interlayers
Felipe Murphy Armando (Tyndall National Institute, University College Cork, Ireland)
- Speaker at Modulation of the intra-axis Delta z valley splitting in Si via strain gradients for electron spin qbits
Artem Musiienko (Helmholtz Zentrum Berlin)
- Speaker at Unlocking high throughput material discovery on defective interfaces
Daniele Nazzari (TU Wien)
- Speaker at Non-volatile reconfigurable Al-Si transistors via ferroelectrically modulated Schottky barriers
Michael Oehme
- Speaker at MBE Growth of Sn/Ge MQW Structures
Oleg Olikh (Taras Shevchenko National University of Kyiv)
- Speaker at Admittance spectroscopy of organic-silicon heterojunction structures fabricated with ultrasound assistance
- Speaker at Estimating recombination-active defect concentrations in silicon n+–p–p+ structures via transfer learning from computer vision models
Rachel Oliver (University of Cambridge)
- Speaker at Controlling formation of single photon emitting colour centres in MOVPE of gallium nitride
Sophie Pain
- Speaker at Hydrogen migration in ALD-grown dielectrics for silicon surface passivation
- Speaker at Superacid-based diagnosis of damage in high-carrier-lifetime crystalline silicon
Matteo Pannocchia (MEMC GlobalWafers)
- Speaker at Epi stacking fault defects in highly doped phosphorus 300 mm crystals
Anita Patelli (Università del Piemonte Orientale)
- Speaker at Synthesis of artificial graphene in the AlGaN/GaN heterostructure through block copolymer self-assembly
Sergey Pavlov (German Aerospace Center)
- Speaker at Infrared properties of a perfectly compensated germanium doped with shallow donors and acceptors below the Mott transition
Sébstien Pezzagna
- Speaker at Photo-induced emission hopping of bright and regularly occurring native quantum emitters in AlN grown by molecular beam epitaxy
Alessandro Puddu (Helmholtz-Zentrum Dresden-Rossendorf / Technische Universität Dresden)
- Speaker at Electrically detected magnetic resonance of telecom-wavelength G and C centers in silicon
Gianmarco Puggioni (Università di Padova)
- Speaker at Investigation of Pinholes Opening in Silicon Solar Cell Passivated Contacts Induced by Pulsed Laser Annealing
Andrea Pulici (CNR-IMM, Unit of Agrate Brianza)
- Speaker at Beyond Bulk: Interface-Driven Dopant Physics in Ultrathin Silicon-on-Insulator
Lars Rebohle
- Speaker at Crystallization of Sn-rich Si and Ge thin films by flash lamp annealing
Vincent Reboud (CEA-Leti, Univ. Grenoble Alpes, F-38000 Grenoble, France)
- Speaker at Monolithic GeSn Photodetectors Integrated on Silicon for Mid-Infrared Applications
Damiano Ricciarelli (CNR-IMM)
- Speaker at Exploring quantum effects and structural interplays in graphene-derived functional materials for sensing and beyond
Hans Richter
- Speaker at GADEST on the interface between Basic Research and Engineering
Nishant Saini
- Speaker at Study of Defect Physics in Zirconia MIM Capacitors
Benedetta Scandolara (University of Padua, Department of Physics and Astronomy “Galileo Galilei”)
- Speaker at UV-nanosecond laser hyperdoping of Ge/Si and SiGe/Si epilayers
Ivan Scheblykin (Chemical Physics and NanoLund, Lund University, Sweden)
- Speaker at Metal-Halide Perovskites and Their “Magic” Defects
Leon Schiller (Fraunhofer IISB)
- Speaker at Non-destructive visualization of the threading dislocation content in PVT-grown bulk AlN on wafer scale
Steven Schofield (University College London)
- Speaker at Dopants at the Atomic Limit in Silicon and Germanium
Mette Schouten (Eindhoven University of Technology)
- Speaker at Experimental observation and analysis of gliding I3 basal stacking faults in hexagonal germanium
Gabriele Seguini (CNR-IMM Agrate Brianza)
- Speaker at Tuning Kondo effect via two-dimensional confinement in highly doped silicon-on-insulator
Gabriele Seguini (CNR-IMM, Unit of Agrate Brianza)
- Speaker at Photo electrical characterization of the interface states in dielectric/AlGaN/GaN structures
Francesco Sgarbossa (Dfa unipd)
- Speaker at Hyperdoped and Highly Strained Ge:Sb layers by Pulsed Laser Melting for Next-Generation Germanium Cristalline Gamma-Ray Sources
- Speaker at Lithium-free segmentable hyperpure germanium detector via Pulsed Laser Melting
- Speaker at Pulsed Laser Melting for TOPCon technology: new routes to higher efficiency
Sinz
- Speaker at Diffusion of p-type dopants in Germanium
Masiar Sistani (Institute of Solid State Electronics, TU Wien)
- Speaker at Cryogenic SiGe Transistors based on Modulation Acceptor Doping
Giulia Spataro (Università di Padova)
- Speaker at Emergent optical and transport phenomena in hyperdoped n-type Ge
Koji Sueoka
- Speaker at Atomic structures and stability of large-sized vacancy clusters and finite-size extended interstitial defects in silicon: A neural-network potential and first-principles study
- Speaker at Search for stable atomic configurations in SiGe, SiSn, and GeSn alloys using DFT and optimization algorithms
Kaisla Sutinen (Aalto University, Department of Electronics and Nanoengineering)
- Speaker at Detection of nuclei for oxidation induced stacking faults
Tamás Szarvas
- Speaker at Non-destructive light scattering-based bulk micro defect detection in silicon wafers
Mariia Terletskaia
- Speaker at Controlled surface cleaning of MACE-nanotextured Ge for cost-efficient high-performance UV-SWIR photodetection
Henriette Tetzner
- Speaker at Electrical Properties of Dislocation-Related Defects in Ge/Si Virtual Substrates
Jiri Tomkovic (Institute of Applied Physics, TU-Freiberg)
- Speaker at Response Surface Modelling for a Vertical GaN HVPE Reactor within a Constrained Design Space
Vanira Trifiletti (University of Milano-Bicocca)
- Speaker at Defect Engineering and Passivation at Halide Perovskite and Kesterite Nanoparticles Interface: A Combined Experimental and DFT Study
- Speaker at Evaluating Structural Stability and Optoelectronic Properties of Lead-Free Metal Halide Perovskite Thin Films
Tröger-Neuhaus
- Speaker at Oxygen diffusion in Aluminium-Nitride
Ignazio Vacante (CNR - IMM sezione Catania)
- Speaker at Evaluation of impurity effects in magic-angle twisted bilayer graphene by machine learning interatomic potentials
Vl. Kolkovsky
- Speaker at Magnetron-Sputtered HfO2 Thin Films for Microelectronic and Sensor Applications
Jinge Wang
- Speaker at Impact of Substrate Carbon Impurities on MOSFET Breakdown Voltage via Enhanced Phosphorus Out-Diffusion in n/n⁺ Epitaxial Wafers
Yilun Wang (Zhejiang University)
- Speaker at Elimination of slip lines induced by the pins in rapid thermal processing for Czochralski silicon wafers
Charlotte Weiss
- Speaker at Ge-on-Si Substrates with Porous Silicon buffer as Compliant Layer
Shuyu Wen (Helmholtz-Zentrum Dresden-Rossendorf)
- Speaker at Optically detected spin properties of the telecom L-band C center in silicon
Lennaert Wouters (Imec)
- Speaker at Scanning Spreading Resistance Microscopy as a Key Nano-Metrology Technique for Semiconductor Technology Scaling – History and Future
Jörg Wrachtrup (University of Stuttgart and Max Planck Institute for Solid State Research, Germany)
- Speaker at Engineering Defects for Quantum Technology
Yanan Xu
- Speaker at Origin of optically active Er3+ sites in Silicon on Insulator-based photonic waveguides
Haohan Ye (Zhejiang University)
- Speaker at Atomic-scale mechanism of step-edge-induced stacking fault evolution during HVPE growth of (100) β-Ga2O3
Shuai Yuan (Zhejiang University)
- Speaker at Controlled Copper Precipitation for Rapid Point Defect Characterization in Near-Perfect Czochralski Silicon
Shengqiang Zhou
- Speaker at Doping Engineering of Double-SOI Structures for Two-Channel Tunneling Transistors
竹田伊織 (岡山県立大学)
- Speaker at DFT Analysis of Gettering in Si Wafers for CMOS Image Sensors
小澤幸司 (岡山県立大学大学院)
- Speaker at Theoretical study on the stability of Sn atom in Ge thin film grown on GaSb substrates

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GADEST 2026