GADEST 2026

Session

Nitride Semiconductors

WBG-2

30 Sept 2026, 08:30

GADEST 2026 - San Servolo Island, Venice (Italy)

135. Controlling formation of single photon emitting colour centres in MOVPE of gallium nitride

Rachel Oliver (University of Cambridge)

30/09/2026, 08:30

Wide Band Gap Materials - II

Invited presentation

Point defects in gallium nitride (GaN) have recently emerged as a promising platform for room-temperature single-photon generation, exhibiting high emission rates and robust optical properties. GaN also benefits from well-established fabrication processes due to its widespread use in applications such as solid-state lighting and high power and high frequency electronics. Whilst wafers of bulk...

104. Photo-induced emission hopping of bright and regularly occurring native quantum emitters in AlN grown by molecular beam epitaxy

Sébastien Pezzagna

30/09/2026, 09:10

Wide Band Gap Materials - II

Oral presentation

84. Non-destructive visualization of the threading dislocation content in PVT-grown bulk AlN on wafer scale

Leon Schiller (Fraunhofer IISB)

30/09/2026, 09:30

Wide Band Gap Materials - II

Oral presentation

59. Plasma enhanced Atomic Layer Etching on Nitrides and SiC for high power and photonic application

Dr Franziska C. Beyer (deutsch)

30/09/2026, 09:50

Wide Band Gap Materials - II

Invited presentation