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GADEST 2026

27 September 2026 to 2 October 2026
GADEST 2026 - San Servolo Island, Venice (Italy)
Europe/Rome timezone

Modulation Acceptor Doping of Silicon: Induced defects in SiO2 for hole generation in impurity-free Si

1 Oct 2026, 12:00
20m
Auditorium Hall

Auditorium Hall
Oral presentation Group IV Semiconductors - IV Silicon, germanium and their alloys II

Speaker

Daniel Hiller (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)

Author

Daniel Hiller (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)

Co-authors

Dr Dirk König (Research School of Physics, Australian National University (ANU)) Dr Ingmar Ratschinski (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg) Mrs Katharina Klose (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg) Mr Shail Shah (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg) Mrs Somayeh Shams (Institute of Applied Physics (IAP), Technical University Bergakademie Freiberg)

Presentation materials

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