The conference is focused on fundamental aspects as well as technological problems associated with defects in semiconductor materials and devices for applications ranging from microelectronics to photovoltaics. The main topics of this 2026 edition are summarized into the following categories:
- Group IV semiconductors (Si, Ge, SiGe, GeSn, …) for microelectronic, photonic, photovoltaic and quantum applications: crystal growth, processing and modelling, defect generation, characterization and engineering, defects and surface passivation strategies, dopant introduction and activation, diffusion and segregation phenomena, degradation phenomena.
- Wide band gap materials (SiC, GaN, AlGaN, AlN, Ga₂O₃, …) and devices for high-power and high-frequency applications: material growth and characterization, doping, defect, 2DEG and 2DHG characterization and engineering.
- Low-dimensional semiconductors: nanoparticles, nanowires, layers and ultra-thin film synthesis and processing, doping, quantum phenomena, surface defects and passivation, surface-induced phenomena.
- Advanced and alternative semiconductor devices: emerging device concepts such as gate-all-around FETs, junctionless transistors, functionality-enhanced FETs, cryogenic electronics, spin centres for quantum photonics and sensing, quantum devices, spin and defect-related qubits in Si, Ge, SiC and diamond, novel materials (GaOx, perovskites, …) and concepts for optoelectronic, photovoltaic and radiation detector applications.
These topics are not exhaustive, and any contribution fitting within the focus of the conference is welcome.
