GADEST 2026

Session

Silicon, Germanium and their Alloys I

G4S-3

29 Sept 2026, 10:40

GADEST 2026 - San Servolo Island, Venice (Italy)

Conveners

Silicon, Germanium and their Alloys I

• Session chairs: Andrea Pulici (CNR-IMM, Unit of Agrate Brianza)
• Giulia Spataro (Dipartimento di Fisica e Astronomia, Università di Padova, via Marzolo 8, 35131, Padova, Italy)

33. Gate-defined quantum circuits in silicon-germanium heterostructures (Tu-I2)

Dominique Bougeard

29/09/2026, 10:40

Group IV Semiconductors - III

Invited presentation

92. UV-nanosecond laser hyperdoping of Ge/Si and SiGe/Si epilayers (Tu-O4)

Benedetta Scandolara (University of Padua, Department of Physics and Astronomy “Galileo Galilei”)

29/09/2026, 11:20

Group IV Semiconductors - III

Oral presentation

23. Crystallization of Sn-rich Si and Ge thin films by flash lamp annealing (Tu-O5)

Lars Rebohle

29/09/2026, 11:40

Group IV Semiconductors - III

Oral presentation

77. Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys. (Tu-O6)

Enrico Di Russo (Università di Padova)

29/09/2026, 12:00

Group IV Semiconductors - III

Oral presentation

122. Positron trapping in highly p-type Ge (Tu-O7)

Pejk Amoroso (University of Helsinki)

29/09/2026, 12:20

Group IV Semiconductors - III

Oral presentation