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GADEST 2026

27 September 2026 to 2 October 2026
GADEST 2026 - San Servolo Island, Venice (Italy)
Europe/Rome timezone

Session

Silicon, germanium and their alloys I

G4S-3
29 Sept 2026, 10:40
GADEST 2026 - San Servolo Island, Venice (Italy)

GADEST 2026 - San Servolo Island, Venice (Italy)

Presentation materials

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  1. 33. Gate-defined quantum circuits in silicon-germanium heterostructures
    Dominique Bougeard
    29/09/2026, 10:40
    Group IV Semiconductors - III
    Invited presentation
  2. 92. UV-nanosecond laser hyperdoping of Ge/Si and SiGe/Si epilayers
    Benedetta Scandolara (University of Padua, Department of Physics and Astronomy “Galileo Galilei”)
    29/09/2026, 11:20
    Group IV Semiconductors - III
    Oral presentation
  3. 23. Crystallization of Sn-rich Si and Ge thin films by flash lamp annealing
    Lars Rebohle
    29/09/2026, 11:40
    Group IV Semiconductors - III
    Oral presentation
  4. 77. Ex-situ incorporation of Al in Ge by sputter deposition and pulsed laser melting: a new approach to fabricate hyper-doped Ge:Al alloys.
    Enrico Di Russo (Università di Padova)
    29/09/2026, 12:00
    Group IV Semiconductors - III
    Oral presentation
  5. 122. Positron trapping in highly p-type Ge
    Pejk Amoroso (University of Helsinki)
    29/09/2026, 12:20
    Group IV Semiconductors - III
    Oral presentation
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