Pulsed UV excimer laser crystallization of sputter-deposited MoS2 films

by Daniele Demeneghi

Thursday 4 Jun 2026, 16:30 → 16:45 Europe/Rome

1/1-3 - Aula B (Dipartimento di Fisica e Astronomia - Edificio Marzolo)

The integration of transition metal dichalcogenides (TMDs) into devices for nanoelectronics, optics, and sensing requires a growth method that is cheap, scalable, and compatible with the processes used in the semiconductor industry. An unconventional approach is the Pulsed Laser Annealing (PLA) of amorphous TMDs deposited through sputtering to induce an ultra-rapid thermal treatment confined to the surface of the sample. In this work an excimer UV laser is used to crystallize 2-8 nm thick MoS2 films deposited on SiO 2 /Si substrates. Raman, AFM and RBS are employed to study films fabricated with a range of laser processing parameters. Optimal processing conditions were found that will allow to investigate the crystallization mechanism. Finally, this work shows another avenue to speed up the integration of large-area 2D materials with Si-based devices.